Vishay SIHH Type N-Channel MOSFET, 30 A, 650 V Enhancement, 4-Pin PowerPAK 8 x 8 SIHH085N60EF-T1GE3
- RS Stock No.:
- 268-8300
- Mfr. Part No.:
- SIHH085N60EF-T1GE3
- Brand:
- Vishay
Subtotal (1 reel of 3000 units)*
£13,641.00
(exc. VAT)
£16,368.00
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 3,000 unit(s) shipping from 05 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 + | £4.547 | £13,641.00 |
*price indicative
- RS Stock No.:
- 268-8300
- Mfr. Part No.:
- SIHH085N60EF-T1GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | SIHH | |
| Package Type | PowerPAK 8 x 8 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 0.085Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 63nC | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Maximum Power Dissipation Pd | 184W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Length | 8mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series SIHH | ||
Package Type PowerPAK 8 x 8 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 0.085Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 63nC | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Maximum Power Dissipation Pd 184W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Length 8mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- TW
The Vishay EF series power MOSFET with fast body diode and 4 generation E series technology which has reduced switching and conduction losses and it is used in applications such as switch mode power supplies, server power supplies and power factor correct
Low effective capacitance
Avalanche energy rated
Low figure of merit
Related links
- Vishay Dual Silicon N-Channel MOSFET 650 V, 4-Pin PowerPAK 8 x 8 SIHH085N60EF-T1GE3
- Vishay Dual Silicon N-Channel MOSFET 650 V, 4-Pin PowerPAK 8 x 8 SIHH250N60EF-T1GE3
- Vishay Dual Silicon N-Channel MOSFET 150 V, 4-Pin PowerPAK 8 x 8L SIJH5700E-T1-GE3
- Vishay EF N-Channel MOSFET 16 A 4-Pin PowerPAK 8 x 8 SIHH186N60EF-T1GE3
- Vishay EF N-Channel MOSFET 23 A 4-Pin PowerPAK 8 x 8 SIHH125N60EF-T1GE3
- Vishay EF N-Channel MOSFET 36 A 4-Pin PowerPAK 8 x 8 SIHH070N60EF-T1GE3
- Vishay Dual Silicon N-Channel MOSFET 650 V, 8-Pin PowerPAK 10 x 12 SIHK045N60EF-T1GE3
- Vishay N-Channel MOSFET 600 V, 4-Pin PowerPAK 8 x 8 SiHH105N60EF-T1GE3