STMicroelectronics Dual Silicon N-Channel MOSFET, 56 A, 56 A, 3-Pin TO-247 STWA60N043DM9

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Packaging Options:
RS Stock No.:
275-1384
Mfr. Part No.:
STWA60N043DM9
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

56 A

Maximum Drain Source Voltage

56 A

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Channel Mode

Enhancement

Number of Elements per Chip

2

Transistor Material

Silicon

COO (Country of Origin):
CN
The STMicroelectronics N-channel power MOSFET is based on the most innovative super junction MDmesh DM9 technology, suitable for medium or high voltage MOSFETs featuring very low RDS(on) per area coupled with a fast recovery diode. The silicon based DM9 technology benefits from a multi drain manufacturing process which allows an enhanced device structure.

Fast recovery body diode
Worldwide best RDS per area among silicon based fast recovery devices
Low gate charge, input capacitance and resistance
100 percent avalanche tested

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