Infineon OptiMOS Type N-Channel MOSFET, 106 A, 30 V Enhancement, 8-Pin PG-TSDSON-8FL
- RS Stock No.:
- 273-5248
- Mfr. Part No.:
- BSZ0902NSATMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 10 units)*
£6.34
(exc. VAT)
£7.61
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 70 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | £0.634 | £6.34 |
| 50 - 490 | £0.58 | £5.80 |
| 500 - 990 | £0.498 | £4.98 |
| 1000 - 2490 | £0.489 | £4.89 |
| 2500 + | £0.479 | £4.79 |
*price indicative
- RS Stock No.:
- 273-5248
- Mfr. Part No.:
- BSZ0902NSATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 106A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PG-TSDSON-8FL | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 3.5mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 48W | |
| Typical Gate Charge Qg @ Vgs | 26nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS, IEC61249-2-21, DIN IEC 68-1: 55/175/56 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 106A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PG-TSDSON-8FL | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 3.5mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 48W | ||
Typical Gate Charge Qg @ Vgs 26nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS, IEC61249-2-21, DIN IEC 68-1: 55/175/56 | ||
Automotive Standard No | ||
The Infineon MOSFET is a N channel power MOSFET. This MOSFET has an excellent gate charge. It is qualified according to JEDEC for target applications and it is 100 percent avalanche tested. It is a optimized for high performance buck converter.
Halogen free
RoHS compliant
Pb free lead plating
Very low on resistance
Superior thermal resistance
Related links
- Infineon N-Channel MOSFET 30 V, 8-Pin PG-TSDSON-8 FL BSZ0902NSATMA1
- Infineon N-Channel MOSFET 30 V, 8-Pin PG-TSDSON-8 FL ISZ019N03L5SATMA1
- Infineon N-Channel MOSFET 30 V, 8-Pin PG-TSDSON-8 FL BSZ0901NSIATMA1
- Infineon OptiMOS Power Transistor SiC P-Channel MOSFET 150 V, 8-Pin PG-TSDSON-8 FL ISZ75DP15LMATMA1
- Infineon OptiMOS Power Transistor SiC P-Channel MOSFET 100 V, 8-Pin PG-TSDSON-8 FL ISZ24DP10LMATMA1
- Infineon OptiMOS Power Transistor SiC P-Channel MOSFET 150 V, 8-Pin PG-TSDSON-8 FL ISZ56DP15LMATMA1
- Infineon N-Channel MOSFET 25 V PG-TSDSON-8-FL BSZ036NE2LSATMA1
- Infineon OptiMOS Power Transistor SiC P-Channel MOSFET 60 V, 8-Pin PG-TSDSON-8 FL ISZ810P06LMATMA1


