Infineon IPB057N06N N-Channel MOSFET, 45 A, 60 V Enhancement, 3-Pin PG-TO263-3 IPB057N06NATMA1
- RS Stock No.:
- 273-2998
- Mfr. Part No.:
- IPB057N06NATMA1
- Brand:
- Infineon
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 5 units)*
£8.85
(exc. VAT)
£10.60
(inc. VAT)
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In Stock
- 945 unit(s) ready to ship
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | £1.77 | £8.85 |
| 50 - 95 | £1.642 | £8.21 |
| 100 - 245 | £1.448 | £7.24 |
| 250 - 495 | £1.398 | £6.99 |
| 500 + | £1.232 | £6.16 |
*price indicative
- RS Stock No.:
- 273-2998
- Mfr. Part No.:
- IPB057N06NATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 45A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | IPB057N06N | |
| Package Type | PG-TO263-3 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 5.7mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1V | |
| Maximum Power Dissipation Pd | 83W | |
| Minimum Operating Temperature | -5°C | |
| Typical Gate Charge Qg @ Vgs | 27nC | |
| Maximum Operating Temperature | 175°C | |
| Height | 1.5mm | |
| Width | 40mm | |
| Standards/Approvals | JEDEC 1, IEC61249-2-21 | |
| Length | 40mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 45A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series IPB057N06N | ||
Package Type PG-TO263-3 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 5.7mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1V | ||
Maximum Power Dissipation Pd 83W | ||
Minimum Operating Temperature -5°C | ||
Typical Gate Charge Qg @ Vgs 27nC | ||
Maximum Operating Temperature 175°C | ||
Height 1.5mm | ||
Width 40mm | ||
Standards/Approvals JEDEC 1, IEC61249-2-21 | ||
Length 40mm | ||
Automotive Standard No | ||
The Infineon power MOSFET is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices are a perfect choice for a broad range of industrial appl
Highest system efficiency
Less paralleling required
Increased power density
System cost reduction
Related links
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