Infineon SPD18P06P G Type P-Channel MOSFET, -18.6 A, 60 V Enhancement, 3-Pin PG-TO252-3
- RS Stock No.:
- 273-2832
- Mfr. Part No.:
- SPD18P06PGBTMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 5 units)*
£4.80
(exc. VAT)
£5.75
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 50 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | £0.96 | £4.80 |
| 50 - 95 | £0.856 | £4.28 |
| 100 - 245 | £0.664 | £3.32 |
| 250 + | £0.652 | £3.26 |
*price indicative
- RS Stock No.:
- 273-2832
- Mfr. Part No.:
- SPD18P06PGBTMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | -18.6A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | SPD18P06P G | |
| Package Type | PG-TO252-3 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Typical Gate Charge Qg @ Vgs | 22nC | |
| Maximum Power Dissipation Pd | 80W | |
| Forward Voltage Vf | 1.33V | |
| Maximum Operating Temperature | 175°C | |
| Width | 40 mm | |
| Height | 1.5mm | |
| Length | 40mm | |
| Standards/Approvals | IEC 68-1, RoHS, AEC Q101 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id -18.6A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series SPD18P06P G | ||
Package Type PG-TO252-3 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Typical Gate Charge Qg @ Vgs 22nC | ||
Maximum Power Dissipation Pd 80W | ||
Forward Voltage Vf 1.33V | ||
Maximum Operating Temperature 175°C | ||
Width 40 mm | ||
Height 1.5mm | ||
Length 40mm | ||
Standards/Approvals IEC 68-1, RoHS, AEC Q101 | ||
Automotive Standard AEC-Q101 | ||
The Infineon MOSFET is a P channel, enhancement mode MOSFET. It has 175 degree Celsius operating temperature. This MOSFET is qualified according to AEC Q101 standard.
RoHS compliant
Avalanche rated
Pb free lead plating
Related links
- Infineon P-Channel MOSFET -60 V, 3-Pin DPAK SPD18P06PGBTMA1
- Infineon P-Channel MOSFET ISP26DP06NMSATMA1
- Infineon P-Channel MOSFET Depletion FS3L40R07W2H5FB70BPSA1
- Infineon P-Channel MOSFET 60 V PG-SO 8 BSO613SPVGXUMA1
- Infineon P-Channel MOSFET Depletion FB50R07W2E3B23BOMA1
- Infineon P-Channel MOSFET Depletion FB50R07W2E3C36BPSA1
- Infineon P-Channel MOSFET Depletion FF900R17ME7WB11BPSA1
- Infineon P-Channel MOSFET Depletion IFF750B12ME7B11BPSA1


