Vishay SIHG Type N-Channel MOSFET, 22 A, 650 V Enhancement, 3-Pin TO-247AC SIHG150N60E-GE3
- RS Stock No.:
- 268-8298
- Mfr. Part No.:
- SIHG150N60E-GE3
- Brand:
- Vishay
Bulk discount available
Subtotal (1 tube of 25 units)*
£62.65
(exc. VAT)
£75.175
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 500 unit(s) shipping from 05 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 25 - 75 | £2.506 | £62.65 |
| 100 - 475 | £2.052 | £51.30 |
| 500 - 975 | £1.749 | £43.73 |
| 1000 + | £1.576 | £39.40 |
*price indicative
- RS Stock No.:
- 268-8298
- Mfr. Part No.:
- SIHG150N60E-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 22A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-247AC | |
| Series | SIHG | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.158Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Typical Gate Charge Qg @ Vgs | 36nC | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 179W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 15.7mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 22A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-247AC | ||
Series SIHG | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.158Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Typical Gate Charge Qg @ Vgs 36nC | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 179W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 15.7mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay E series power MOSFET which has reduced switching and conduction losses and it is used in applications such as switch mode power supplies, server power supplies and power factor correction power supplies.
Low effective capacitance
Avalanche energy rated
Low figure of merit
Related links
- Vishay Dual Silicon N-Channel MOSFET 650 V, 3-Pin TO-247AC SIHG150N60E-GE3
- Vishay Dual Silicon N-Channel MOSFET 650 V, 3-Pin TO-220AB SIHP150N60E-GE3
- Vishay Dual Silicon N-Channel MOSFET 650 V, 3-Pin TO-247AC SIHG085N60EF-GE3
- Vishay Dual Silicon N-Channel MOSFET 650 V, 3-Pin TO-220AB SIHP085N60EF-GE3
- Vishay Dual Silicon N-Channel MOSFET 650 V, 8-Pin PowerPAK SO-8DC SIHA150N60E-GE3
- Vishay Dual Silicon N-Channel MOSFET 650 V, 3-Pin D2PAK SIHB085N60EF-GE3
- Vishay Dual Silicon N-Channel MOSFET 650 V, 8-Pin PowerPAK 10 x 12 SIHK105N60E-T1-GE3
- Vishay Dual Silicon N-Channel MOSFET 600 V, 3-Pin D2PAK SIHB080N60E-GE3