Infineon HEXFET Silicon N-Channel MOSFET, 16 A, 100 V, 3-Pin IPAK IRFU3910PBF
- RS Stock No.:
- 262-6775
- Mfr. Part No.:
- IRFU3910PBF
- Brand:
- Infineon
Subtotal (1 tube of 3000 units)*
£999.00
(exc. VAT)
£1,200.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 25 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
---|---|---|
3000 + | £0.333 | £999.00 |
*price indicative
- RS Stock No.:
- 262-6775
- Mfr. Part No.:
- IRFU3910PBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 16 A | |
Maximum Drain Source Voltage | 100 V | |
Package Type | TO-251AA | |
Series | HEXFET | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Channel Mode | Enhancement | |
Transistor Material | Silicon | |
Number of Elements per Chip | 1 | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 16 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type TO-251AA | ||
Series HEXFET | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Channel Mode Enhancement | ||
Transistor Material Silicon | ||
Number of Elements per Chip 1 | ||
The Infineon power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. It has ultra low on-resistance. It provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Fast switching
Fully avalanche rated
Fully avalanche rated
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