Infineon HEXFET Dual Silicon N-Channel MOSFET, 72 A, 200 V, 3-Pin TO-262 IRFSL4127PBF
- RS Stock No.:
- 262-6771
- Mfr. Part No.:
- IRFSL4127PBF
- Brand:
- Infineon
Subtotal (1 tube of 1000 units)*
£2,168.00
(exc. VAT)
£2,602.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 01 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 1000 + | £2.168 | £2,168.00 |
*price indicative
- RS Stock No.:
- 262-6771
- Mfr. Part No.:
- IRFSL4127PBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 72 A | |
| Maximum Drain Source Voltage | 200 V | |
| Package Type | TO-262 | |
| Series | HEXFET | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Channel Mode | Enhancement | |
| Transistor Material | Silicon | |
| Number of Elements per Chip | 2 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 72 A | ||
Maximum Drain Source Voltage 200 V | ||
Package Type TO-262 | ||
Series HEXFET | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Channel Mode Enhancement | ||
Transistor Material Silicon | ||
Number of Elements per Chip 2 | ||
The Infineon power MOSFET provides benefits such as improved gate, avalanche and dynamic dV/dt ruggedness and fully characterized capacitance and avalanche SOA.
Enhanced body diode dV/dt and dI/dt capability
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