Infineon Dual SiC N-Channel MOSFET, 282 A, 60 A, 7-Pin PG-TO263-7 IPF012N06NF2SATMA1

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Subtotal (1 pack of 2 units)*

£6.20

(exc. VAT)

£7.44

(inc. VAT)

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2 - 18£3.10£6.20
20 - 48£2.785£5.57
50 - 98£2.605£5.21
100 - 198£2.45£4.90
200 +£2.26£4.52

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Packaging Options:
RS Stock No.:
262-5877
Mfr. Part No.:
IPF012N06NF2SATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

282 A

Maximum Drain Source Voltage

60 A

Package Type

PG-TO263-7

Mounting Type

Surface Mount

Pin Count

7

Channel Mode

Enhancement

Number of Elements per Chip

2

Transistor Material

SiC

The Infineon N channel power transistor is optimized for wide range of applications and it is 100 percent avalanche tested.

Pb-free lead plating
RoHS compliant
Halogen free according to IEC61249-2-21

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