Infineon Dual SiC N-Channel MOSFET, 302 A, 40 V, 7-Pin PG-TO263-7 IPF009N04NF2SATMA1

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Subtotal (1 pack of 2 units)*

£5.72

(exc. VAT)

£6.86

(inc. VAT)

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Per Pack*
2 - 18£2.86£5.72
20 - 48£2.575£5.15
50 - 98£2.40£4.80
100 - 198£2.23£4.46
200 +£2.06£4.12

*price indicative

Packaging Options:
RS Stock No.:
262-5870
Mfr. Part No.:
IPF009N04NF2SATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

302 A

Maximum Drain Source Voltage

40 V

Package Type

PG-TO263-7

Mounting Type

Surface Mount

Pin Count

7

Channel Mode

Enhancement

Transistor Material

SiC

Number of Elements per Chip

2

The Infineon N channel power transistor is optimized for wide range of applications and it is 100 percent avalanche tested.

Pb-free lead plating
RoHS compliant
Halogen free according to IEC61249-2-21

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