Infineon Dual SiC N-Channel MOSFET, 197 A, 40 V, 3-Pin PG-TO263-3 IPB012N04NF2SATMA1
- RS Stock No.:
- 262-5844
- Mfr. Part No.:
- IPB012N04NF2SATMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 reel of 800 units)*
£697.60
(exc. VAT)
£836.80
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 800 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 800 - 800 | £0.872 | £697.60 |
| 1600 + | £0.828 | £662.40 |
*price indicative
- RS Stock No.:
- 262-5844
- Mfr. Part No.:
- IPB012N04NF2SATMA1
- Brand:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 197 A | |
| Maximum Drain Source Voltage | 40 V | |
| Package Type | PG-TO263-3 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Channel Mode | Enhancement | |
| Transistor Material | SiC | |
| Number of Elements per Chip | 2 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 197 A | ||
Maximum Drain Source Voltage 40 V | ||
Package Type PG-TO263-3 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Channel Mode Enhancement | ||
Transistor Material SiC | ||
Number of Elements per Chip 2 | ||
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