Infineon Dual SiC N-Channel MOSFET, 201 A, 40 V, 3-Pin PG-TO263-3 IPB011N04NF2SATMA1

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Subtotal (1 reel of 800 units)*

£962.40

(exc. VAT)

£1,155.20

(inc. VAT)

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  • 800 unit(s) ready to ship
  • Plus 999,998,400 unit(s) shipping from 01 January 2026
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800 +£1.203£962.40

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RS Stock No.:
262-5842
Mfr. Part No.:
IPB011N04NF2SATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

201 A

Maximum Drain Source Voltage

40 V

Package Type

PG-TO263-3

Mounting Type

Surface Mount

Pin Count

3

Channel Mode

Enhancement

Transistor Material

SiC

Number of Elements per Chip

2

The Infineon N channel power transistor is optimized for wide range of applications and it is 100 percent avalanche tested.

Pb-free lead plating
RoHS compliant
Halogen free according to IEC61249-2-21

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