Infineon Dual SiC N-Channel MOSFET, 201 A, 40 V, 3-Pin PG-TO263-3 IPB011N04NF2SATMA1

View all MOSFETs

Subtotal (1 reel of 800 units)*

£962.40

(exc. VAT)

£1,155.20

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 800 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Reel*
800 +£1.203£962.40

*price indicative

RS Stock No.:
262-5842
Mfr. Part No.:
IPB011N04NF2SATMA1
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

201 A

Maximum Drain Source Voltage

40 V

Package Type

PG-TO263-3

Mounting Type

Surface Mount

Pin Count

3

Channel Mode

Enhancement

Transistor Material

SiC

Number of Elements per Chip

2

The Infineon N channel power transistor is optimized for wide range of applications and it is 100 percent avalanche tested.

Pb-free lead plating
RoHS compliant
Halogen free according to IEC61249-2-21

Sponsored
Infineon CoolSic Schottky Diode
Infineon Logo
Infineon Schottky Diodes & MOSFETs – Matched for Power, Built for Efficiency
Pair Infineon Schottky diodes with Infineon MOSFETs for a high-efficiency power solution that’s optimised from the ground up. Designed to work together, they deliver fast switching, low losses, and excellent thermal performance—ideal for SMPS, motor drives, and automotive systems. Reduce design complexity and boost reliability with components engineered for synergy.
Explore the Infineon range today

Related links