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Infineon IPT Type N-Channel MOSFET, 190 A, 150 V, 8-Pin TOLG IPTG039N15NM5ATMA1

RS Stock No.:: 260-2674
Mfr. Part No.:: IPTG039N15NM5ATMA1
Brand:: Infineon

Infineon IPT Type N-Channel MOSFET, 190 A, 150 V, 8-Pin TOLG IPTG039N15NM5ATMA1

Bulk discount available

Subtotal (1 unit)*

£5.70

(exc. VAT)

£6.84

(inc. VAT)

FREE delivery for orders over £50.00

Temporarily out of stock

Shipping from 29 June 2026

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Units	Per unit
1 - 9	£5.70
10 - 24	£5.41
25 - 49	£5.30
50 - 99	£4.96
100 +	£4.62

*price indicative

RS Stock No.:: 260-2674
Mfr. Part No.:: IPTG039N15NM5ATMA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	190A
	Maximum Drain Source Voltage Vds	150V
	Package Type	TOLG
	Series	IPT
	Pin Count	8
	Maximum Drain Source Resistance Rds	3.9mΩ
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	0.81V
	Maximum Power Dissipation Pd	319W
	Typical Gate Charge Qg @ Vgs	74nC
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS, IEC 61249-2-21
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 190A
	Maximum Drain Source Voltage Vds 150V
	Package Type TOLG
	Series IPT
	Pin Count 8
	Maximum Drain Source Resistance Rds 3.9mΩ
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 0.81V
	Maximum Power Dissipation Pd 319W
	Typical Gate Charge Qg @ Vgs 74nC
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS, IEC 61249-2-21
	Automotive Standard No

Datasheet - IPTG039N15NM5ATMA1

The Infineon MOSFET comes in the improved TO leaded package with gullwing leads having a compatible footprint to TO leadless which allows excellent electrical performance. It is a best in class technology with a high current rating.

High performance capability

High system reliability

High efficiency and lower EMI

Optimized board utilization