Infineon N-Channel MOSFET Transistor, 13 A, 600 V TO-220 IPP60R040S7XKSA1

This MOSFET transistor is a cutting-edge high-voltage semiconductor component designed for efficient power switching. With robust specifications including a continuous drain current of 13A and a maximum drain-source voltage of 600V, it is encapsulated in a TO-220 package, making it suitable for a variety of applications. Ensuring reliable performance in demanding environments, it operates within a wide temperature range from -55°C to +150°C.

• Designed with CoolMOS™ S7 technology to minimise conduction losses
• Offers a low on-state resistance of 40mΩ for enhanced efficiency
• Capable of handling high pulse currents for demanding requirements
• Optimised for low-frequency switching applications, improving system performance
• Built-in features ensure high reliability in static switching scenarios

• Utilised for solid-state relays and innovative circuit breaker designs
• Ideal for line rectification within high-power performances such as computing and telecommunications
• Applicable in renewable energy solutions, particularly solar inverters

The device boasts a maximum power dissipation of 245W and a thermal resistance from junction to ambient of 62°C/W, facilitating effective heat management. This ensures longevity and reliability in demanding operational conditions.

With its low on-state resistance and CoolMOS™ technology, energy losses during operation are significantly reduced, enabling improved overall efficiency and minimising heat generation in low-frequency environments.

It is advisable to evaluate the impact of cosmic radiation during the design phase and consider appropriate design practices, such as using ferrite beads on the gate for parallel applications, to mitigate any potential issues.