Infineon IPP N-Channel MOSFET Transistor, 13 A, 600 V, 3-Pin TO-220 IPP60R040S7XKSA1

RS Stock No.:: 260-1215
Mfr. Part No.:: IPP60R040S7XKSA1
Brand:: Infineon

Infineon IPP N-Channel MOSFET Transistor, 13 A, 600 V, 3-Pin TO-220 IPP60R040S7XKSA1

Subtotal (1 tube of 500 units)*

£988.00

(exc. VAT)

£1,185.50

(inc. VAT)

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Shipping from 02 October 2026

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Units	Per unit	Per Tube*
500 +	£1.976	£988.00

*price indicative

RS Stock No.:: 260-1215
Mfr. Part No.:: IPP60R040S7XKSA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	13 A
	Maximum Drain Source Voltage	600 V
	Series	IPP
	Package Type	TO-220
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	40 m?
	Maximum Gate Threshold Voltage	4.5V
	Minimum Gate Threshold Voltage	3.5V
	Maximum Power Dissipation	245 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	± 20 V
	Width	15.95mm
	Maximum Operating Temperature	+150 °C
	Number of Elements per Chip	1
	Length	10.36mm
	Height	4.57mm
	Forward Diode Voltage	0.82V
	Minimum Operating Temperature	-55 °C

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 13 A
	Maximum Drain Source Voltage 600 V
	Series IPP
	Package Type TO-220
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 40 m?
	Maximum Gate Threshold Voltage 4.5V
	Minimum Gate Threshold Voltage 3.5V
	Maximum Power Dissipation 245 W
	Transistor Configuration Single
	Maximum Gate Source Voltage ± 20 V
	Width 15.95mm
	Maximum Operating Temperature +150 °C
	Number of Elements per Chip 1
	Length 10.36mm
	Height 4.57mm
	Forward Diode Voltage 0.82V
	Minimum Operating Temperature -55 °C

Datasheet - IPP60R040S7XKSA1

Infineon Series IPP MOSFET Transistor, 600V Maximum Drain Source Voltage, 13A Maximum Continuous Drain Current - IPP60R040S7XKSA1

This MOSFET transistor is a cutting-edge high-voltage semiconductor component designed for efficient power switching. With robust specifications including a continuous drain current of 13A and a maximum drain-source voltage of 600V, it is encapsulated in a TO-220 package, making it suitable for a variety of applications. Ensuring reliable performance in demanding environments, it operates within a wide temperature range from -55°C to +150°C.

Features & Benefits

• Designed with CoolMOS™ S7 technology to minimise conduction losses
• Offers a low on-state resistance of 40mΩ for enhanced efficiency
• Capable of handling high pulse currents for demanding requirements
• Optimised for low-frequency switching applications, improving system performance
• Built-in features ensure high reliability in static switching scenarios

Applications

• Utilised for solid-state relays and innovative circuit breaker designs
• Ideal for line rectification within high-power performances such as computing and telecommunications
• Applicable in renewable energy solutions, particularly solar inverters

What are the critical features impacting thermal performance?

The device boasts a maximum power dissipation of 245W and a thermal resistance from junction to ambient of 62°C/W, facilitating effective heat management. This ensures longevity and reliability in demanding operational conditions.

How does this component enhance system efficiency for low-frequency applications?

With its low on-state resistance and CoolMOS™ technology, energy losses during operation are significantly reduced, enabling improved overall efficiency and minimising heat generation in low-frequency environments.

What are the recommended practices for using this in high-voltage applications?

It is advisable to evaluate the impact of cosmic radiation during the design phase and consider appropriate design practices, such as using ferrite beads on the gate for parallel applications, to mitigate any potential issues.