Infineon N-Channel MOSFET, 50 A, 30 V PG-TO263-7 IPD060N03LGATMA1

Subtotal (1 reel of 2500 units)*

£502.50

(exc. VAT)

£602.50

(inc. VAT)

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Units
Per unit
Per Reel*
2500 +£0.201£502.50

*price indicative

RS Stock No.:
258-7078
Mfr. Part No.:
IPD060N03LGATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

50 A

Maximum Drain Source Voltage

30 V

Package Type

PG-TO263-7

Mounting Type

Surface Mount

Infineon OptiMOS™3 Power MOSFETs, up to 40V


OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

Fast switching MOSFET for SMPS
Optimized technology for DC/DC converters
Qualified according to JEDEC1) for target applications
N-channel, logic level
Excellent gate charge x R DS(on) product (FOM)
Very low on-resistance R DS(on)
Pb-free plating

The Infineon OptiMOS 3 power transistor has ultra low gate and output charge, together with lowest on state resistance in small footprint packages, make it the best choice for the demanding requirements of voltage regulator solutions in servers, Datacom and telecom applications.

Increased battery lifetime
Reducing power losses
Easy to design in



MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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