Infineon OptiMOS™ -T2 Silicon N-Channel MOSFET, 50 A, 80 V, 3-Pin DPAK IPD50N08S413ATMA1

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Subtotal (1 pack of 15 units)*

£12.57

(exc. VAT)

£15.09

(inc. VAT)

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15 - 60£0.838£12.57
75 - 135£0.796£11.94
150 - 360£0.763£11.45
375 - 735£0.729£10.94
750 +£0.679£10.19

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Packaging Options:
RS Stock No.:
229-1833
Mfr. Part No.:
IPD50N08S413ATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

50 A

Maximum Drain Source Voltage

80 V

Series

OptiMOS™ -T2

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.0132 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Number of Elements per Chip

1

Transistor Material

Silicon

The Infineon n channel MOSFET has 175°C operating temperature and 100 percent avalanche tested.

It is RoHS compliant and AEC Q101 qualified

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