Infineon OptiMOS™ -T2 Silicon N-Channel MOSFET, 50 A, 80 V, 3-Pin DPAK IPD50N08S413ATMA1
- RS Stock No.:
- 229-1833
- Mfr. Part No.:
- IPD50N08S413ATMA1
- Brand:
- Infineon
Save 18% when you buy 750 units
Subtotal (1 pack of 15 units)*
£12.57
(exc. VAT)
£15.09
(inc. VAT)
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In Stock
- 9,915 unit(s) ready to ship
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Units | Per unit | Per Pack* |
---|---|---|
15 - 60 | £0.838 | £12.57 |
75 - 135 | £0.796 | £11.94 |
150 - 360 | £0.763 | £11.45 |
375 - 735 | £0.729 | £10.94 |
750 + | £0.679 | £10.19 |
*price indicative
- RS Stock No.:
- 229-1833
- Mfr. Part No.:
- IPD50N08S413ATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 50 A | |
Maximum Drain Source Voltage | 80 V | |
Series | OptiMOS™ -T2 | |
Package Type | DPAK (TO-252) | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 0.0132 Ω | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 4V | |
Number of Elements per Chip | 1 | |
Transistor Material | Silicon | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 50 A | ||
Maximum Drain Source Voltage 80 V | ||
Series OptiMOS™ -T2 | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 0.0132 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Number of Elements per Chip 1 | ||
Transistor Material Silicon | ||
The Infineon n channel MOSFET has 175°C operating temperature and 100 percent avalanche tested.
It is RoHS compliant and AEC Q101 qualified
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