Infineon IPD Type N-Channel MOSFET, 50 A, 80 V Enhancement, 3-Pin TO-252 IPD50N08S413ATMA1

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Subtotal (1 pack of 15 units)*

£9.90

(exc. VAT)

£11.85

(inc. VAT)

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15 - 60£0.66£9.90
75 - 135£0.627£9.41
150 - 360£0.601£9.02
375 - 735£0.574£8.61
750 +£0.535£8.03

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Packaging Options:
RS Stock No.:
229-1833
Mfr. Part No.:
IPD50N08S413ATMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

50A

Maximum Drain Source Voltage Vds

80V

Package Type

TO-252

Series

IPD

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

13.2mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

72W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

19nC

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Length

6.5mm

Height

2.3mm

Width

6.22 mm

Automotive Standard

AEC-Q101

The Infineon n channel MOSFET has 175°C operating temperature and 100 percent avalanche tested.

It is RoHS compliant and AEC Q101 qualified

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