Infineon N-Channel MOSFET, 180 A, 40 V PG-TO263-3 IPB180N04S400ATMA1
- RS Stock No.:
- 258-7073
- Mfr. Part No.:
- IPB180N04S400ATMA1
- Brand:
- Infineon
Subtotal (1 reel of 1000 units)*
£1,440.00
(exc. VAT)
£1,730.00
(inc. VAT)
FREE delivery for orders over £60.00
Temporarily out of stock
- Shipping from 21 December 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 1000 + | £1.44 | £1,440.00 |
*price indicative
- RS Stock No.:
- 258-7073
- Mfr. Part No.:
- IPB180N04S400ATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 180A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | PG-TO263-3 | |
| Mount Type | Surface Mount | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 300W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | AEC, MSL1, RoHS | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 180A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type PG-TO263-3 | ||
Mount Type Surface Mount | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 300W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals AEC, MSL1, RoHS | ||
The Infineon OptiMOS has lowest switching and conduction power losses for highest thermal efficiency. It also has optimized total gate charge which enables smaller driver output stages.
AEC qualified
Green product
Ultra low Rds on
100 percent avalanche tested
Related links
- Infineon N-Channel MOSFET 40 V PG-TO263-3 IPB180N04S400ATMA1
- Infineon IPB057N06N N-Channel MOSFET 60 V Enhancement, 3-Pin PG-TO263-3
- Infineon OptiMOS N-Channel MOSFET 650 V Enhancement, 3-Pin PG-TO263-3
- Infineon OptiMOS N-Channel MOSFET 650 V Enhancement, 3-Pin PG-TO263-3
- Infineon OptiMOS N-Channel MOSFET 650 V Enhancement, 3-Pin PG-TO263-3
- Infineon IPB057N06N N-Channel MOSFET 60 V Enhancement, 3-Pin PG-TO263-3 IPB057N06NATMA1
- Infineon OptiMOS-TM6 N-Channel MOSFET 200 V Enhancement, 3-Pin PG-TO263-3 IPB068N20NM6ATMA1
- Infineon OptiMOS N-Channel MOSFET 650 V Enhancement, 3-Pin PG-TO263-3 IPB65R115CFD7AATMA1