Infineon MOSFET, 211 A, 700 V PG-TO220-3 IPP65R041CFD7XKSA1
- RS Stock No.:
- 258-3896
- Mfr. Part No.:
- IPP65R041CFD7XKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 tube of 50 units)*
£252.40
(exc. VAT)
£302.90
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 500 unit(s) shipping from 06 October 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | £5.048 | £252.40 |
| 100 - 100 | £4.645 | £232.25 |
| 150 + | £4.392 | £219.60 |
*price indicative
- RS Stock No.:
- 258-3896
- Mfr. Part No.:
- IPP65R041CFD7XKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Drain Current | 211 A | |
| Maximum Drain Source Voltage | 700 V | |
| Package Type | PG-TO220-3 | |
| Mounting Type | Surface Mount | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Drain Current 211 A | ||
Maximum Drain Source Voltage 700 V | ||
Package Type PG-TO220-3 | ||
Mounting Type Surface Mount | ||
The Infineon 650V CoolMOS CFD7 super junction MOSFET in a TO-220 package is ideally suited for resonant topologies in industrial applications, such as server, telecom, solar, and EV-charging stations, in which it enables significant efficiency improvements compared to competition. As a successor to the CFD2 SJ MOSFET family, it comes with reduced gate charge, improved turn-off behaviour, and reduced reverse recovery charge enabling highest efficiency and power density as well as additional 50V breakdown voltage.
Ultrafast body diode and very low Qrr
650V breakdown voltage
Significantly reduced switching losses compared to competition
Excellent hard-commutation ruggedness
Extra safety margin for designs with increased bus voltage
Enabling increased power density
650V breakdown voltage
Significantly reduced switching losses compared to competition
Excellent hard-commutation ruggedness
Extra safety margin for designs with increased bus voltage
Enabling increased power density
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