Infineon Dual N Channel Logic Level Enhancement Mode OptiMOSTM-T2 Type N-Channel MOSFET, 20 A, 100 V Dual N, 8-Pin TDSON

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£2.50

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£3.00

(inc. VAT)

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2 - 18£1.25£2.50
20 - 48£1.125£2.25
50 - 98£1.05£2.10
100 - 198£0.975£1.95
200 +£0.91£1.82

*price indicative

Packaging Options:
RS Stock No.:
258-3883
Mfr. Part No.:
IPG20N10S4L22AATMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

20A

Maximum Drain Source Voltage Vds

100V

Series

OptiMOSTM-T2

Package Type

TDSON

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

22mΩ

Channel Mode

Dual N

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

60W

Maximum Gate Source Voltage Vgs

±16 V

Typical Gate Charge Qg @ Vgs

21nC

Forward Voltage Vf

1V

Maximum Operating Temperature

175°C

Transistor Configuration

Dual N Channel Logic Level Enhancement Mode

Standards/Approvals

RoHS Compliant

Automotive Standard

AEC-Q101

The Infineon OptiMOS-T2 power-transistor is Dual N-channel normal level enhancement mode. It has 175°C operating temperature.

AEC Q101 qualified

MSL1 up to 260°C peak reflow

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