Infineon Dual N Channel Logic Level Enhancement Mode OptiMOSTM-T2 Type N-Channel MOSFET, 20 A, 100 V Dual N, 8-Pin TDSON

Bulk discount available

Subtotal (1 pack of 2 units)*

£3.00

(exc. VAT)

£3.60

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • Plus 4,948 unit(s) shipping from 09 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
2 - 18£1.50£3.00
20 - 48£1.35£2.70
50 - 98£1.26£2.52
100 - 198£1.17£2.34
200 +£1.09£2.18

*price indicative

Packaging Options:
RS Stock No.:
258-3883
Mfr. Part No.:
IPG20N10S4L22AATMA1
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

20A

Maximum Drain Source Voltage Vds

100V

Series

OptiMOSTM-T2

Package Type

TDSON

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

22mΩ

Channel Mode

Dual N

Maximum Power Dissipation Pd

60W

Typical Gate Charge Qg @ Vgs

21nC

Forward Voltage Vf

1V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

±16 V

Maximum Operating Temperature

175°C

Transistor Configuration

Dual N Channel Logic Level Enhancement Mode

Standards/Approvals

RoHS Compliant

Automotive Standard

AEC-Q101

The Infineon OptiMOS-T2 power-transistor is Dual N-channel normal level enhancement mode. It has 175°C operating temperature.

AEC Q101 qualified

MSL1 up to 260°C peak reflow

Related links