Infineon Dual N Channel Logic Level Enhancement Mode OptiMOSTM-T2 Dual N-Channel MOSFET, 20 A, 60 V Enhancement, 8-Pin

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£3.38

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£4.06

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2 - 18£1.69£3.38
20 - 48£1.52£3.04
50 - 98£1.425£2.85
100 - 198£1.32£2.64
200 +£1.235£2.47

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Packaging Options:
RS Stock No.:
258-3881
Mfr. Part No.:
IPG20N06S4L11ATMA2
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Dual N

Maximum Continuous Drain Current Id

20A

Maximum Drain Source Voltage Vds

60V

Series

OptiMOSTM-T2

Package Type

TDSON

Mount Type

Surface

Pin Count

8

Channel Mode

Enhancement

Forward Voltage Vf

1V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

±16 V

Maximum Power Dissipation Pd

65W

Typical Gate Charge Qg @ Vgs

41nC

Transistor Configuration

Dual N Channel Logic Level Enhancement Mode

Maximum Operating Temperature

175°C

Standards/Approvals

AEC Q101

Automotive Standard

AEC-Q101

The Infineon OptiMOS-T2 power-transistor is dual super S08 can replace multiple DPAKs for significant PCB area savings and system level cost reduction. Same thermal and electrical performance as a DPAK with the same die size.

MSL1 up to 260°C peak reflow

175°C operating temperature

Green Product (RoHS compliant)

100% Avalanche tested

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