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Infineon Dual N Channel Logic Level Enhancement Mode OptiMOSTM-T2 Dual N-Channel MOSFET, 20 A, 60 V Enhancement, 8-Pin

RS Stock No.:: 258-3881
Mfr. Part No.:: IPG20N06S4L11ATMA2
Brand:: Infineon

Infineon Dual N Channel Logic Level Enhancement Mode OptiMOSTM-T2 Dual N-Channel MOSFET, 20 A, 60 V Enhancement, 8-Pin

Bulk discount available

Subtotal (1 pack of 2 units)*

£2.70

(exc. VAT)

£3.24

(inc. VAT)

FREE delivery for orders over £50.00

In Stock

4,996 unit(s) ready to ship

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Units	Per unit	Per Pack*
2 - 18	£1.35	£2.70
20 - 48	£1.215	£2.43
50 - 98	£1.135	£2.27
100 - 198	£1.055	£2.11
200 +	£0.985	£1.97

*price indicative

RS Stock No.:: 258-3881
Mfr. Part No.:: IPG20N06S4L11ATMA2
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Dual N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	20A
	Maximum Drain Source Voltage Vds	60V
	Series	OptiMOSTM-T2
	Package Type	TDSON
	Mount Type	Surface
	Pin Count	8
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	41nC
	Forward Voltage Vf	1V
	Maximum Gate Source Voltage Vgs	±16 V
	Maximum Power Dissipation Pd	65W
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Transistor Configuration	Dual N Channel Logic Level Enhancement Mode
	Standards/Approvals	AEC Q101
	Automotive Standard	AEC-Q101

	Select all
	Brand Infineon
	Channel Type Dual N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 20A
	Maximum Drain Source Voltage Vds 60V
	Series OptiMOSTM-T2
	Package Type TDSON
	Mount Type Surface
	Pin Count 8
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 41nC
	Forward Voltage Vf 1V
	Maximum Gate Source Voltage Vgs ±16 V
	Maximum Power Dissipation Pd 65W
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Transistor Configuration Dual N Channel Logic Level Enhancement Mode
	Standards/Approvals AEC Q101
	Automotive Standard AEC-Q101

Datasheet - IPG20N06S4L11ATMA2

The Infineon OptiMOS-T2 power-transistor is dual super S08 can replace multiple DPAKs for significant PCB area savings and system level cost reduction. Same thermal and electrical performance as a DPAK with the same die size.

MSL1 up to 260°C peak reflow

175°C operating temperature

Green Product (RoHS compliant)

100% Avalanche tested