Infineon IPD Type P-Channel MOSFET, -85 A, -40 V Enhancement TO-252

Subtotal (1 reel of 2500 units)*

£1,112.50

(exc. VAT)

£1,335.00

(inc. VAT)

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Units
Per unit
Per Reel*
2500 +£0.445£1,112.50

*price indicative

RS Stock No.:
258-3865
Mfr. Part No.:
IPD85P04P407ATMA2
Brand:
Infineon
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Brand

Infineon

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

-85A

Maximum Drain Source Voltage Vds

-40V

Package Type

TO-252

Series

IPD

Mount Type

Surface

Maximum Drain Source Resistance Rds

7.3mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

69nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

88W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

-1V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS, DIN IEC 68-1

Automotive Standard

AEC-Q101

The Infineon OptiMOS-P2 power-transistor is lowest switching and conduction power losses for highest thermal efficiency. Robust packages with superior quality and reliability.

No charge pump required for high side drive

Simple interface drive circuit

Highest current capability

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