Infineon IPD Type N-Channel MOSFET, 31 A, 650 V Enhancement TO-252

Subtotal (1 reel of 2500 units)*

£1,015.00

(exc. VAT)

£1,217.50

(inc. VAT)

Add to Basket
Select or type quantity
Stock information currently inaccessible - Please check back later
Units
Per unit
Per Reel*
2500 +£0.406£1,015.00

*price indicative

RS Stock No.:
258-3853
Mfr. Part No.:
IPD60R280PFD7SAUMA1
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

31A

Maximum Drain Source Voltage Vds

650V

Series

IPD

Package Type

TO-252

Mount Type

Surface

Maximum Drain Source Resistance Rds

210mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Standards/Approvals

No

Automotive Standard

No

The Infineon 600V CoolMOS PFD7 super junction MOSFET complements the CoolMOS 7 offering for consumer applications. The CoolMOS PFD7 super junction MOSFET in a TO 252 DPAK package features RDS(on) of 280mOhm leading to low switching losses. The products come with an integrated fast body diode ensuring a robust device. The fast body diode and industry-leading SMD package reduce PCB space and in turn the bill-of-material the customer. This product family is tailored to ultrahigh power density as well as highest efficiency designs. The products primarily address ultrahigh density chargers, adapters and low-power motor drives. The 600V CoolMOS PFD7 offers improved light- and full-load efficiency over CoolMOS P7 and CE MOSFET technologies resulting in an increase in power density by 1.8W/inch3.

Excellent commutation ruggedness

Low EMI

Broad package portfolio

BOM cost reduction and easy manufacturing

Robustness and reliability

Easy to select the right parts for design fine-tuning

Related links

Be the first to know about our latest products and offers

Email address

The personal information you provide to us when signing up to this mailing list will be processed in line with the Privacy Policy