Infineon MOSFET, 24 A, 650 V PG-TO252-3 IPD60R360PFD7SAUMA1
- RS Stock No.:
- 258-3858
- Mfr. Part No.:
- IPD60R360PFD7SAUMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 5 units)*
£4.28
(exc. VAT)
£5.135
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 2,395 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | £0.856 | £4.28 |
| 50 - 120 | £0.676 | £3.38 |
| 125 - 245 | £0.634 | £3.17 |
| 250 - 495 | £0.59 | £2.95 |
| 500 + | £0.54 | £2.70 |
*price indicative
- RS Stock No.:
- 258-3858
- Mfr. Part No.:
- IPD60R360PFD7SAUMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Drain Current | 24 A | |
| Maximum Drain Source Voltage | 650 V | |
| Package Type | PG-TO252-3 | |
| Mounting Type | Surface Mount | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Drain Current 24 A | ||
Maximum Drain Source Voltage 650 V | ||
Package Type PG-TO252-3 | ||
Mounting Type Surface Mount | ||
The Infineon 600V CoolMOS PFD7 super junction MOSFET complements the CoolMOS 7 offering for consumer applications. The CoolMOS PFD7 super junction MOSFET in a TO-252 DPAK package features RDS(on) of 360mOhm leading to low switching losses. The products come with an integrated fast body diode ensuring a robust device. The fast body diode and Infineon industry-leading SMD package reduce PCB space and in turn the bill-of-material the customer. This product family is tailored to ultrahigh power density as well as highest efficiency designs. The products primarily address ultrahigh density chargers, adapters and low-power motor drives. The 600V CoolMOS PFD7 offers improved light- and full-load efficiency over CoolMOS P7 and CE MOSFET technologies resulting in an increase in power density by 1.8W/inch3.
Excellent commutation ruggedness
Low EMI
Broad package portfolio
BOM cost reduction and easy manufacturing
Robustness and reliability
Easy to select the right parts for design fine-tuning
Low EMI
Broad package portfolio
BOM cost reduction and easy manufacturing
Robustness and reliability
Easy to select the right parts for design fine-tuning
Related links
- Infineon MOSFET 650 V PG-TO252-3 IPD60R360PFD7SAUMA1
- Infineon P-Channel MOSFET 40 V PG-TO252-3-313 IPD70P04P409ATMA2
- Infineon MOSFET 650 V PG-TDSON-8 IPLK60R360PFD7ATMA1
- Infineon N-Channel MOSFET 100 V PG-TO252-3 IPD12CN10NGATMA1
- Infineon P-Channel MOSFET 100 V PG-TO252-3 SPD15P10PLGBTMA1
- Infineon N-Channel MOSFET 30 V PG-TO252-3 BSO220N03MDGXUMA1
- Infineon N-Channel MOSFET 40 V PG-TO252-3-313 IPD50N04S4L08ATMA1
- Infineon N-Channel MOSFET 100 V PG-TO252-3 IPD122N10N3GATMA1