Infineon IPD Type N-Channel MOSFET, 4.3 A, 500 V N, 3-Pin TO-252 IPD50R950CEAUMA1
- RS Stock No.:
- 258-3847
- Mfr. Part No.:
- IPD50R950CEAUMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 5 units)*
£2.93
(exc. VAT)
£3.515
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 2,290 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | £0.586 | £2.93 |
| 50 - 120 | £0.522 | £2.61 |
| 125 - 245 | £0.494 | £2.47 |
| 250 - 495 | £0.456 | £2.28 |
| 500 + | £0.294 | £1.47 |
*price indicative
- RS Stock No.:
- 258-3847
- Mfr. Part No.:
- IPD50R950CEAUMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 4.3A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Package Type | TO-252 | |
| Series | IPD | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 950mΩ | |
| Channel Mode | N | |
| Forward Voltage Vf | 0.83V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Typical Gate Charge Qg @ Vgs | 10.5nC | |
| Maximum Power Dissipation Pd | 53W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 4.3A | ||
Maximum Drain Source Voltage Vds 500V | ||
Package Type TO-252 | ||
Series IPD | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 950mΩ | ||
Channel Mode N | ||
Forward Voltage Vf 0.83V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Typical Gate Charge Qg @ Vgs 10.5nC | ||
Maximum Power Dissipation Pd 53W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon 500V CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching super junction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market.
High body diode ruggedness
Reduced reverse recovery charge
Easy control of switching behaviour
Related links
- Infineon MOSFET 550 V PG-TO 252 IPD50R950CEAUMA1
- Infineon CoolMOS™ CE N-Channel MOSFET 550 V, 3-Pin SOT-223 IPN50R950CEATMA1
- Infineon MOSFET 650 V PG-TO 252-3 IPD60R2K0PFD7SAUMA1
- Infineon MOSFET 650 V PG-TO 252-3 IPD60R600PFD7SAUMA1
- Infineon MOSFET 650 V PG-TO 252-3 IPD60R280PFD7SAUMA1
- Infineon MOSFET Transistor, 1.7 A PG-TO 252 IPD60R3K3C6ATMA1
- Infineon MOSFET Transistor, 3.7 A PG-TO 252 IPD60R2K1CEAUMA1
- Infineon MOSFET Transistor, 18.1 A PG-TO 252 IPD50R280CEAUMA1


