MPN

Infineon iPB Type N-Channel MOSFET, 136 A, 150 V N, 7-Pin TO-263

RS Stock No.:: 258-3792
Mfr. Part No.:: IPB060N15N5ATMA1
Brand:: Infineon

Infineon iPB Type N-Channel MOSFET, 136 A, 150 V N, 7-Pin TO-263

Subtotal (1 reel of 1000 units)*

£2,544.00

(exc. VAT)

£3,053.00

(inc. VAT)

FREE delivery for orders over £50.00

In Stock

Plus 1,000 unit(s) shipping from 29 December 2025

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Units	Per unit	Per Reel*
1000 +	£2.544	£2,544.00

*price indicative

RS Stock No.:: 258-3792
Mfr. Part No.:: IPB060N15N5ATMA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	136A
	Maximum Drain Source Voltage Vds	150V
	Series	iPB
	Package Type	TO-263
	Mount Type	Surface
	Pin Count	7
	Maximum Drain Source Resistance Rds	6mΩ
	Channel Mode	N
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	0.9V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	54.5nC
	Maximum Power Dissipation Pd	250W
	Maximum Operating Temperature	175°C
	Standards/Approvals	IEC 61249-2-21, RoHS
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 136A
	Maximum Drain Source Voltage Vds 150V
	Series iPB
	Package Type TO-263
	Mount Type Surface
	Pin Count 7
	Maximum Drain Source Resistance Rds 6mΩ
	Channel Mode N
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf 0.9V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 54.5nC
	Maximum Power Dissipation Pd 250W
	Maximum Operating Temperature 175°C
	Standards/Approvals IEC 61249-2-21, RoHS
	Automotive Standard No

Datasheet - IPB060N15N5ATMA1

The Infineon OptiMOS 5 150 V power MOSFETs from Infineon are particularly suitable for low voltage drives such as forklifts and e-scooters, as well as telecom and solar applications. The new products offer a breakthrough reduction in RDS(on) and Qrr without compromising FOM gd and FOM OSS, effectively reducing design effort whilst optimizing system efficiency. Furthermore, the ultra-low reverse recovery charge increases commutation ruggedness.

Lower output charge

Ultra-low reverse recovery charge

Reduced paralleling

Higher power density designs