Infineon N-Channel MOSFET, 166 A, 100 V PG-TO263-7 IPB032N10N5ATMA1
- RS Stock No.:
- 258-3790
- Mfr. Part No.:
- IPB032N10N5ATMA1
- Brand:
- Infineon
Subtotal (1 reel of 1000 units)*
£1,516.00
(exc. VAT)
£1,819.00
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 1,000 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
---|---|---|
1000 + | £1.516 | £1,516.00 |
*price indicative
- RS Stock No.:
- 258-3790
- Mfr. Part No.:
- IPB032N10N5ATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 166 A | |
Maximum Drain Source Voltage | 100 V | |
Package Type | PG-TO263-7 | |
Mounting Type | Surface Mount | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 166 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type PG-TO263-7 | ||
Mounting Type Surface Mount | ||
The Infineon OptiMOS 5 100V power MOSFET is especially designed for synchronous rectification in telecom blocks including Or-ing, hot swap and battery protection as well as for server power supply applications. The device has a lower RDS(on) of 22% compared to similar devices , one of the biggest contributors to this industry leading FOM is the low on-state resistance providing the highest level of power density and efficiency.
Reduced switching and conduction losses
Less paralleling required
Increased power density
Low voltage overshoot
Less paralleling required
Increased power density
Low voltage overshoot
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