Infineon OptiMOS™ N-Channel MOSFET, 306 A, 60 V TSON-8-3 BSC012N06NSATMA1
- RS Stock No.:
- 258-0679
- Mfr. Part No.:
- BSC012N06NSATMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 unit)*
£2.84
(exc. VAT)
£3.41
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 4,478 unit(s) ready to ship
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Units | Per unit |
|---|---|
| 1 - 9 | £2.84 |
| 10 - 24 | £2.70 |
| 25 - 49 | £2.59 |
| 50 - 99 | £2.47 |
| 100 + | £2.31 |
*price indicative
- RS Stock No.:
- 258-0679
- Mfr. Part No.:
- BSC012N06NSATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 306 A | |
| Maximum Drain Source Voltage | 60 V | |
| Series | OptiMOS™ | |
| Package Type | TSON-8-3 | |
| Mounting Type | Surface Mount | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 306 A | ||
Maximum Drain Source Voltage 60 V | ||
Series OptiMOS™ | ||
Package Type TSON-8-3 | ||
Mounting Type Surface Mount | ||
The Infineon OptiMOS MOSFETs in SuperSO8 package extend OptiMOS 3 and 5 product portfolio and enable higher power density in addition to improved robustness, responding to the need for lower system cost and increased performance. Low reverse recovery charge improves the system reliability by providing a significant reduction of voltage overshoot, which minimizes the need for snubber circuits, resulting in less engineering cost and effort.
Lower full load temperature
Less paralleling
Reduced overshoot
Increased system power density
Smaller size
Less paralleling
Reduced overshoot
Increased system power density
Smaller size
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