Infineon OptiMOS N-Channel MOSFET, 306 A, 60 V Enhancement, 8-Pin TSON BSC012N06NSATMA1
- RS Stock No.:
- 258-0679
- Mfr. Part No.:
- BSC012N06NSATMA1
- Brand:
- Infineon
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Units | Per unit |
|---|---|
| 1 - 9 | £3.48 |
| 10 - 24 | £3.31 |
| 25 - 49 | £3.18 |
| 50 - 99 | £3.03 |
| 100 + | £2.83 |
*price indicative
- RS Stock No.:
- 258-0679
- Mfr. Part No.:
- BSC012N06NSATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 306A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | OptiMOS | |
| Package Type | TSON | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.20mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 214W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | +175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 306A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series OptiMOS | ||
Package Type TSON | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.20mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 214W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature +175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon OptiMOS MOSFETs in SuperSO8 package extend OptiMOS 3 and 5 product portfolio and enable higher power density in addition to improved robustness, responding to the need for lower system cost and increased performance. Low reverse recovery charge improves the system reliability by providing a significant reduction of voltage overshoot, which minimizes the need for snubber circuits, resulting in less engineering cost and effort.
Lower full load temperature
Less paralleling
Reduced overshoot
Increased system power density
Smaller size
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