Infineon HEXFET N-Channel MOSFET, 3.4 A, 20 V PQFN IRLHS6276TRPBF
- RS Stock No.:
- 257-5826
- Mfr. Part No.:
- IRLHS6276TRPBF
- Brand:
- Infineon
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 10 units)*
£4.03
(exc. VAT)
£4.84
(inc. VAT)
FREE delivery for orders over £60.00
Temporarily out of stock
- 3,570 unit(s) shipping from 05 October 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 90 | £0.403 | £4.03 |
| 100 - 240 | £0.383 | £3.83 |
| 250 - 490 | £0.343 | £3.43 |
| 500 - 990 | £0.243 | £2.43 |
| 1000 + | £0.198 | £1.98 |
*price indicative
- RS Stock No.:
- 257-5826
- Mfr. Part No.:
- IRLHS6276TRPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 3.4A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | PQFN | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 65mΩ | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 12V | |
| Typical Gate Charge Qg @ Vgs | 3.1nC | |
| Maximum Power Dissipation Pd | 9.6W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS Compliant | |
| Width | 2mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 3.4A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type PQFN | ||
Series HEXFET | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 65mΩ | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 12V | ||
Typical Gate Charge Qg @ Vgs 3.1nC | ||
Maximum Power Dissipation Pd 9.6W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS Compliant | ||
Width 2mm | ||
Automotive Standard No | ||
The Infineon strongIRFET power MOSFET family is optimized for low RDS and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Industry standard surface-mount power package
Low RDS(on) in a small package
Related links
- Infineon HEXFET N-Channel MOSFET 20 V PQFN
- Infineon HEXFET N-Channel MOSFET -40 V, 6-Pin TSOP-6
- Infineon HEXFET N-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23
- Infineon HEXFET N-Channel MOSFET 20 V PQFN
- Infineon HEXFET N-Channel MOSFET 20 V PQFN
- Infineon HEXFET N-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23 IRLML6346TRPBF
- Infineon HEXFET N-Channel MOSFET 20 V PQFN IRLHS6242TRPBF
- Infineon HEXFET N-Channel MOSFET 20 V PQFN IRFH6200TRPBF


