Vishay SI5442DU Type N-Channel MOSFET, 25 A, 20 V, 8-Pin PowerPAK ChipFET SI5442DU-T1-GE3
- RS Stock No.:
- 256-7365
- Mfr. Part No.:
- SI5442DU-T1-GE3
- Brand:
- Vishay
Subtotal (1 pack of 25 units)*
£7.875
(exc. VAT)
£9.45
(inc. VAT)
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In Stock
- Plus 2,675 unit(s) shipping from 22 June 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 25 + | £0.315 | £7.88 |
*price indicative
- RS Stock No.:
- 256-7365
- Mfr. Part No.:
- SI5442DU-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 25A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | PowerPAK ChipFET | |
| Series | SI5442DU | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0135Ω | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 16.6nC | |
| Maximum Power Dissipation Pd | 31W | |
| Maximum Gate Source Voltage Vgs | 8V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | +150°C | |
| Standards/Approvals | RoHS | |
| Height | 0.85mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 25A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type PowerPAK ChipFET | ||
Series SI5442DU | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0135Ω | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 16.6nC | ||
Maximum Power Dissipation Pd 31W | ||
Maximum Gate Source Voltage Vgs 8V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature +150°C | ||
Standards/Approvals RoHS | ||
Height 0.85mm | ||
Automotive Standard No | ||
Vishay SI5442DU Series MOSFET, 20V Maximum Drain Source Voltage, 25A Maximum Continuous Drain Current - SI5442DU-T1-GE3
This MOSFET is a Compact N‑channel switching device intended for surface‑mount power applications. It is designed to handle significant continuous current while operating across a wide temperature range, making it suitable for industrial control and power‑conversion contexts where low conduction losses and Rapid switching are required.
Features and Benefits:
• 25A continuous current capability enables high‑current switching
• 0.0135 Ω Rds(on) minimises conduction losses in power paths
• 20V drain‑source rating supports low‑voltage power rails
• 16.6 nC typical gate charge allows efficient switching control
• 31W power dissipation supports sustained thermal load handling
• Vgs maximum 8V protects the gate from overvoltage during drive
• 0.0135 Ω Rds(on) minimises conduction losses in power paths
• 20V drain‑source rating supports low‑voltage power rails
• 16.6 nC typical gate charge allows efficient switching control
• 31W power dissipation supports sustained thermal load handling
• Vgs maximum 8V protects the gate from overvoltage during drive
Applications
• Suitable for motor‑drive power stages in automation systems
• Ideal for synchronous buck converters in DC-DC supplies
• Used for high‑current load switching in industrial controls
• Can be used for power management in battery‑powered equipment
• Ideal for synchronous buck converters in DC-DC supplies
• Used for high‑current load switching in industrial controls
• Can be used for power management in battery‑powered equipment
What thermal operating limits should be considered during design?
The device is rated for operation from -55 °C up to +150 °C, so thermal management must ensure junction temperatures remain within this range under Peak power conditions.
How many pins and what mounting style does it require on a board?
It is supplied in an 8‑pin surface‑mount PowerPAK ChipFET package, so pad layout and soldering profiles should match an 8‑pin SMD footprint.
What gate‑drive constraints affect drive circuitry selection?
The gate must not be driven beyond a maximum of 8 V, so gate drivers and level shifting must limit Vgs within that threshold to avoid damage.
How should designers evaluate switching performance for high‑frequency use?
Use the typical gate‑charge Value of 16.6 nC at the specified gate voltage to calculate driver energy and switching losses when determining efficiency at the target switching frequencies.
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