N-Channel MOSFET, 11.6 A, 30 V, 8-Pin PowerPAK ChipFET Vishay SI5418DU-T1-GE3

RS Stock No.:: 165-6328
Mfr. Part No.:: SI5418DU-T1-GE3
Brand:: Vishay

N-Channel MOSFET, 11.6 A, 30 V, 8-Pin PowerPAK ChipFET Vishay SI5418DU-T1-GE3

Available to back order for despatch 15/08/2025

Price Each (On a Reel of 3000)

£0.441

(exc. VAT)

£0.529

(inc. VAT)

Units	Per unit	Per Reel*
3000 +	£0.441	£1,323.00

*price indicative

RS Stock No.:: 165-6328
Mfr. Part No.:: SI5418DU-T1-GE3
Brand:: Vishay

Si5418DU, N-Channel 30V (D-S) MOSFET
ESD Control Selection Guide V1

RS Stock No.:: 165-6328
Mfr. Part No.:: SI5418DU-T1-GE3
Brand:: Vishay

Si5418DU, N-Channel 30V (D-S) MOSFET
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	11.6 A
Maximum Drain Source Voltage	30 V
Package Type	PowerPAK ChipFET
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	18.5 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	1.2V
Maximum Power Dissipation	31 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	1
Maximum Operating Temperature	+150 °C
Transistor Material	Si
Length	3.08mm
Typical Gate Charge @ Vgs	20 nC @ 10 V
Width	1.98mm
Minimum Operating Temperature	-55 °C
Height	0.85mm

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	11.6 A
Maximum Drain Source Voltage	30 V
Package Type	PowerPAK ChipFET
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	18.5 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	1.2V
Maximum Power Dissipation	31 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	1
Maximum Operating Temperature	+150 °C
Transistor Material	Si
Length	3.08mm
Typical Gate Charge @ Vgs	20 nC @ 10 V
Width	1.98mm
Minimum Operating Temperature	-55 °C
Height	0.85mm

N-Channel MOSFET, 11.6 A, 30 V, 8-Pin PowerPAK ChipFET Vishay SI5418DU-T1-GE3

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