Vishay SI3437DV Type P-Channel MOSFET, -1.4 A, -150 V, 6-Pin TSOP-6 SI3437DV-T1-GE3
- RS Stock No.:
- 256-7351
- Mfr. Part No.:
- SI3437DV-T1-GE3
- Brand:
- Vishay
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | £0.986 | £4.93 |
| 50 - 95 | £0.884 | £4.42 |
| 100 - 245 | £0.706 | £3.53 |
| 250 - 995 | £0.688 | £3.44 |
| 1000 + | £0.596 | £2.98 |
*price indicative
- RS Stock No.:
- 256-7351
- Mfr. Part No.:
- SI3437DV-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | -1.4A | |
| Maximum Drain Source Voltage Vds | -150V | |
| Series | SI3437DV | |
| Package Type | TSOP-6 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 0.79Ω | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 8nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | -1.2V | |
| Maximum Power Dissipation Pd | 3.2W | |
| Maximum Operating Temperature | +150°C | |
| Height | 1.1mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id -1.4A | ||
Maximum Drain Source Voltage Vds -150V | ||
Series SI3437DV | ||
Package Type TSOP-6 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 0.79Ω | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 8nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf -1.2V | ||
Maximum Power Dissipation Pd 3.2W | ||
Maximum Operating Temperature +150°C | ||
Height 1.1mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Vishay SI3437DV Series MOSFET, 150V Drain Source Voltage, 0.79Ω Drain Source Resistance - SI3437DV-T1-GE3
This p-channel MOSFET is a surface-mount power transistor intended for high-voltage switching and power-management roles in electronic systems. It is designed to operate across a wide temperature range for use in industrial and commercial equipment, providing gate-controlled conduction for applications that require a positive gate-source threshold in a negative-drain environment.
Features and Benefits:
• High voltage rating enables switching at 150V for power circuits • Low on-resistance minimises conduction losses at 0.79 Ω • Continuous current capability supports sustained loads up to 1.4 A • Typical gate charge 8 nC allows efficient gate drive and Faster switching • Maximum power dissipation 3.2W aids thermal budgeting in Compact designs • Gate-source withstand of 20V permits robust drive margin for control stages
Applications
• Suitable for synchronous load switching in industrial controllers • Ideal for polarity and high-side switching in power-management systems • Used for battery management in auxiliary automotive electronics • Can be used for low-to-medium current DC-DC converter stages • Used with Compact surface-mount assemblies where height is critical
What thermal environment can it tolerate for rugged operation?
The device is rated to operate from -55 °C up to +150 °C, enabling use across wide ambient and elevated junction conditions.
How does the package influence board-level layout?
The TSOP-6 surface-mount package with six pins facilitates Compact placement and thermal conduction paths for small-footprint power designs.
What should be considered regarding gate drive requirements?
The gate must be driven within a ±20V range relative to the source and the typical gate charge of 8 nC informs driver sizing to achieve the desired switching speed.
How does the device perform under continuous electrical load?
It is specified for a maximum continuous drain current of 1.4 A and a power dissipation of 3.2 W, which should be used to size PCB copper area and any heat-sinking.
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