Vishay N-Channel MOSFET, 141 A, 80 V, 8-Pin PowerPAK 1212-8 SQS180ELNW-T1_GE3
- RS Stock No.:
- 252-0323
- Mfr. Part No.:
- SQS180ELNW-T1_GE3
- Brand:
- Vishay
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 252-0323
- Mfr. Part No.:
- SQS180ELNW-T1_GE3
- Brand:
- Vishay
Specifications
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Vishay | |
Channel Type | N | |
Maximum Continuous Drain Current | 141 A | |
Maximum Drain Source Voltage | 80 V | |
Package Type | PowerPAK 1212-8 | |
Mounting Type | Surface Mount | |
Pin Count | 8 | |
Number of Elements per Chip | 1 | |
Select all | ||
---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 141 A | ||
Maximum Drain Source Voltage 80 V | ||
Package Type PowerPAK 1212-8 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Number of Elements per Chip 1 | ||
The Vishay automotive MOSFETs are manufactured on a dedicated process flow to in still ruggedness. Rated for a maximum junction temperature of 175 °C, the vishay siliconix AEC-Q101 qualified SQ series features low on-resistance n- and p-channel trench FET technologies in lead (Pb)- and halogen-free SO packages.
TrenchFET Gen IV power MOSFET
AEC-Q101 qualified
100 % Rg and UIS tested
Wettable flank terminals
Low thermal resistance with 0.75 mm profile
AEC-Q101 qualified
100 % Rg and UIS tested
Wettable flank terminals
Low thermal resistance with 0.75 mm profile
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