Nexperia N-Channel MOSFET, 410 A, 50 V, 4-Pin LFPAK88 PSMNR90-50SLHAX
- RS Stock No.:
- 251-7922
- Mfr. Part No.:
- PSMNR90-50SLHAX
- Brand:
- Nexperia
Subtotal (1 reel of 2000 units)*
£5,422.00
(exc. VAT)
£6,506.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 999,998,000 unit(s) shipping from 01 October 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
---|---|---|
2000 + | £2.711 | £5,422.00 |
*price indicative
- RS Stock No.:
- 251-7922
- Mfr. Part No.:
- PSMNR90-50SLHAX
- Brand:
- Nexperia
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Nexperia | |
Channel Type | N | |
Maximum Continuous Drain Current | 410 A | |
Maximum Drain Source Voltage | 50 V | |
Package Type | LFPAK88 | |
Mounting Type | Surface Mount | |
Pin Count | 4 | |
Number of Elements per Chip | 1 | |
Select all | ||
---|---|---|
Brand Nexperia | ||
Channel Type N | ||
Maximum Continuous Drain Current 410 A | ||
Maximum Drain Source Voltage 50 V | ||
Package Type LFPAK88 | ||
Mounting Type Surface Mount | ||
Pin Count 4 | ||
Number of Elements per Chip 1 | ||
The Nexperia 410 Amp continuous current, logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK88 package. Part of the ASFETs for Battery Isolation and DC Motor control family and using Nexperias unique SchottkyPlus technology delivers high efficiency and low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current.
Copper-clip and solder die attach for low package inductance and resistance, and high ID(max) rating
Qualified to 175 °C
Avalanche rated, 100 % tested
Low QG, QGD and QOSS for high efficiency, especially at higher switching frequencies
Superfast switching with soft body-diode recovery for low-spiking and ringing, recommended for low EMI designs
Narrow VGS(th) rating for easy paralleling and improved current sharing
Very strong linear-mode / safe operating area characteristics for safe and reliable switching at high-current conditions
Qualified to 175 °C
Avalanche rated, 100 % tested
Low QG, QGD and QOSS for high efficiency, especially at higher switching frequencies
Superfast switching with soft body-diode recovery for low-spiking and ringing, recommended for low EMI designs
Narrow VGS(th) rating for easy paralleling and improved current sharing
Very strong linear-mode / safe operating area characteristics for safe and reliable switching at high-current conditions
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