Infineon Dual N BSD840N 2 Type P-Channel OptiMOSTM2 Small-Signal-Transistors, 0.88 A, 20 V Dual N, 6-Pin SOT-363
- RS Stock No.:
- 250-0526
- Mfr. Part No.:
- BSD840NH6327XTSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 10 units)*
£1.57
(exc. VAT)
£1.88
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 14,910 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 90 | £0.157 | £1.57 |
| 100 - 240 | £0.149 | £1.49 |
| 250 - 490 | £0.102 | £1.02 |
| 500 - 990 | £0.094 | £0.94 |
| 1000 + | £0.071 | £0.71 |
*price indicative
- RS Stock No.:
- 250-0526
- Mfr. Part No.:
- BSD840NH6327XTSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | OptiMOSTM2 Small-Signal-Transistors | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 0.88A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SOT-363 | |
| Series | BSD840N | |
| Pin Count | 6 | |
| Channel Mode | Dual N | |
| Forward Voltage Vf | 1.1V | |
| Maximum Power Dissipation Pd | 400mW | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Typical Gate Charge Qg @ Vgs | 0.26nC | |
| Minimum Operating Temperature | -55°C | |
| Transistor Configuration | Dual N | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | IEC61249-2-21, RoHS | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type OptiMOSTM2 Small-Signal-Transistors | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 0.88A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SOT-363 | ||
Series BSD840N | ||
Pin Count 6 | ||
Channel Mode Dual N | ||
Forward Voltage Vf 1.1V | ||
Maximum Power Dissipation Pd 400mW | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Typical Gate Charge Qg @ Vgs 0.26nC | ||
Minimum Operating Temperature -55°C | ||
Transistor Configuration Dual N | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals IEC61249-2-21, RoHS | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
The Infineon Small Signal n-channel products are suitable for automotive applications. This device is OptiMOS 2 Small-Signal-Transistor. The Dual N-channel, Enhancement mode. The device offers Ultra Logic level (1.8V rated) and it is Avalanche rated.
Enhancement mode and Pb-free lead plating
Vds is 20 V and Id is 0.88 A
Related links
- Infineon Dual P-Channel MOSFET 20 V, 6-Pin SOT-363 BSD840NH6327XTSA1
- onsemi Dual P-Channel MOSFET 20 V, 6-Pin SOT-363 NTJD4152PT1G
- onsemi Dual N/P-Channel MOSFET 880 mA 30 V, 6-Pin SOT-363 NTJD4158CT1G
- Infineon Dual P-Channel MOSFET 20 V, 6-Pin SOT-363 BSD223PH6327XTSA1
- Infineon Dual N/P-Channel-Channel MOSFET 20 V, 6-Pin SOT-363 BSD235CH6327XTSA1
- onsemi PowerTrench Dual P-Channel MOSFET 20 V, 6-Pin SOT-363 (SC-70) FDG6318P
- onsemi Dual N/P-Channel MOSFET 700 mA 6-Pin SOT-363 FDG6332C
- Diodes Inc Dual N/P-Channel MOSFET 540 mA 6-Pin SOT-363 DMC2004DWK-7