Infineon AUIRFS Type N-Channel MOSFET, 42 A, 75 V, 3-Pin TO-263 AUIRFR2407TRL
- RS Stock No.:
- 249-6874
- Mfr. Part No.:
- AUIRFR2407TRL
- Brand:
- Infineon
Bulk discount available
Subtotal (1 unit)*
£2.30
(exc. VAT)
£2.76
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 167 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 9 | £2.30 |
| 10 - 49 | £2.19 |
| 50 - 99 | £2.10 |
| 100 - 249 | £1.99 |
| 250 + | £1.88 |
*price indicative
- RS Stock No.:
- 249-6874
- Mfr. Part No.:
- AUIRFR2407TRL
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 42A | |
| Maximum Drain Source Voltage Vds | 75V | |
| Package Type | TO-263 | |
| Series | AUIRFS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3mΩ | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Maximum Power Dissipation Pd | 81W | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 42A | ||
Maximum Drain Source Voltage Vds 75V | ||
Package Type TO-263 | ||
Series AUIRFS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3mΩ | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Maximum Power Dissipation Pd 81W | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon HEXFET Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in automotive and a wide variety of other applications.
Advance planner technology
LowOn-Resistance
Dynamic dV/dT Rating
175 C operating temperature
Fast switching
Related links
- Infineon HEXFET N-Channel MOSFET 75 V D2PAK AUIRFR2407TRL
- Infineon HEXFET N-Channel MOSFET 75 V DPAK IRFR2407TRPBF
- Infineon HEXFET Dual Silicon N-Channel MOSFET 75 V, 3-Pin DPAK IRFR2607ZTRPBF
- Infineon HEXFET N-Channel MOSFET 75 V, 3-Pin D2PAK IRFS7734TRLPBF
- Infineon HEXFET N-Channel MOSFET 100 V, 3-Pin D2PAK IRF1310NSTRLPBF
- Infineon HEXFET N-Channel MOSFET 75 V, 3-Pin D2PAK IRFS3307ZTRRPBF
- Infineon HEXFET N-Channel MOSFET 75 V, 3-Pin D2PAK IRF2807STRLPBF
- Infineon HEXFET N-Channel MOSFET 75 V, 3-Pin D2PAK IRF3808STRLPBF


