Infineon AUIRFS Type N-Channel MOSFET, 230 A, 75 V, 3-Pin TO-220 AUIRF3205
- RS Stock No.:
- 249-6868
- Mfr. Part No.:
- AUIRF3205
- Brand:
- Infineon
Bulk discount available
Subtotal (1 unit)*
£3.35
(exc. VAT)
£4.02
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 958 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 9 | £3.35 |
| 10 - 24 | £3.19 |
| 25 - 49 | £3.12 |
| 50 - 99 | £2.91 |
| 100 + | £2.72 |
*price indicative
- RS Stock No.:
- 249-6868
- Mfr. Part No.:
- AUIRF3205
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 230A | |
| Maximum Drain Source Voltage Vds | 75V | |
| Package Type | TO-220 | |
| Series | AUIRFS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3mΩ | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Power Dissipation Pd | 81W | |
| Forward Voltage Vf | 1.3V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 230A | ||
Maximum Drain Source Voltage Vds 75V | ||
Package Type TO-220 | ||
Series AUIRFS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3mΩ | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Power Dissipation Pd 81W | ||
Forward Voltage Vf 1.3V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon HEXFET Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in automotive and a wide variety of other applications.
Advance planner technology
LowOn-Resistance
Dynamic dV/dT Rating
175 C operating temperature
Fast switching
Related links
- Infineon HEXFET N-Channel MOSFET 55 V, 3-Pin TO-220 AUIRF3205
- Infineon HEXFET N-Channel MOSFET 55 V, 3-Pin TO-220AB IRF2805PBF
- Infineon HEXFET N-Channel MOSFET 86 A 3-Pin TO-220AB AUIRL3705Z
- Infineon HEXFET N-Channel MOSFET 75 V, 3-Pin TO-220AB AUIRF2907Z
- Infineon HEXFET N-Channel MOSFET 200 V TO-247AC IRFP4127PBF
- Infineon HEXFET N-Channel MOSFET 40 V, 3-Pin I2PAK IRF2804LPBF
- Infineon HEXFET N-Channel MOSFET 55 V, 3-Pin TO-220 IRFI3205PBF
- Infineon HEXFET N-Channel MOSFET 55 V, 3-Pin TO-220 FP IRLIZ34NPBF


