Infineon HEXFET N-Channel MOSFET, 50 A, 300 V, 3-Pin TO-247AC IRF300P227
- RS Stock No.:
- 244-2930
- Mfr. Part No.:
- IRF300P227
- Brand:
- Infineon
Subtotal (1 unit)*
£6.09
(exc. VAT)
£7.31
(inc. VAT)
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In Stock
- Plus 383 unit(s) shipping from 13 October 2025
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Units | Per unit |
|---|---|
| 1 + | £6.09 |
*price indicative
- RS Stock No.:
- 244-2930
- Mfr. Part No.:
- IRF300P227
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 50 A | |
| Maximum Drain Source Voltage | 300 V | |
| Series | HEXFET | |
| Package Type | TO-247AC | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 50 A | ||
Maximum Drain Source Voltage 300 V | ||
Series HEXFET | ||
Package Type TO-247AC | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Number of Elements per Chip 1 | ||
The Infineon IRF300P227 qualification report describes the characteristics of the product with respect to quality and reliability. The qualification sample selection was done on production lots which were manufactured and tested on standard production processes and meet the defined requirements. The qualification test results of those products as outlined in this document are based on JEDEC for target applications and may reference existing qualification results of similar products. Such referencing is justified by the structural similarity of the products.
Improved Gate, Avalanche and Dynamic dv/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dv/dt and di/dt Capability
Pb-Free
RoHS Compliant
Halogen-Free
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dv/dt and di/dt Capability
Pb-Free
RoHS Compliant
Halogen-Free
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