MPN

Infineon AUIRFS Type N-Channel MOSFET, 43 A, 60 V, 3-Pin TO-252 AUIRFR3806TRL

RS Stock No.:: 244-2877
Mfr. Part No.:: AUIRFR3806TRL
Brand:: Infineon

Infineon AUIRFS Type N-Channel MOSFET, 43 A, 60 V, 3-Pin TO-252 AUIRFR3806TRL

Bulk discount available

Subtotal (1 pack of 2 units)*

£4.10

(exc. VAT)

£4.92

(inc. VAT)

FREE delivery for orders over £50.00

In Stock

2,964 unit(s) ready to ship

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
2 - 18	£2.05	£4.10
20 - 48	£1.91	£3.82
50 - 98	£1.785	£3.57
100 - 198	£1.665	£3.33
200 +	£1.54	£3.08

*price indicative

RS Stock No.:: 244-2877
Mfr. Part No.:: AUIRFR3806TRL
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	43A
	Maximum Drain Source Voltage Vds	60V
	Package Type	TO-252
	Series	AUIRFS
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	3mΩ
	Forward Voltage Vf	1.3V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	80nC
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	81W
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Automotive Standard	AEC-Q101

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 43A
	Maximum Drain Source Voltage Vds 60V
	Package Type TO-252
	Series AUIRFS
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 3mΩ
	Forward Voltage Vf 1.3V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 80nC
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 81W
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Automotive Standard AEC-Q101

Datasheet - AUIRFR3806TRL

The Infineon AUIRFR2905ZTRL specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .These features combine to make this design an extremely efficientand reliable device for use in Automotive applications and a widevariety of other applications.

Advanced Process Technology

Ultra Low On-Resistance

Dynamic dV/dT Rating

175°C Operating Temperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

Lead-Free, RoHS Compliant

Automotive Qualified *