Nexperia MOSFET, 47.2 A, 650 V TO-247 GAN041-650WSBQ
- RS Stock No.:
- 243-4619
- Mfr. Part No.:
- GAN041-650WSBQ
- Brand:
- Nexperia
Subtotal (1 tube of 30 units)*
£438.33
(exc. VAT)
£525.99
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 30 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
---|---|---|
30 + | £14.611 | £438.33 |
*price indicative
- RS Stock No.:
- 243-4619
- Mfr. Part No.:
- GAN041-650WSBQ
- Brand:
- Nexperia
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Nexperia | |
Maximum Continuous Drain Current | 47.2 A | |
Maximum Drain Source Voltage | 650 V | |
Package Type | TO-247 | |
Mounting Type | Through Hole | |
Select all | ||
---|---|---|
Brand Nexperia | ||
Maximum Continuous Drain Current 47.2 A | ||
Maximum Drain Source Voltage 650 V | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
The Nexperia Gallium Nitride (GaN) FET in a TO-247 package is a normally-off device that combines Nexperias latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies offering superior reliability and performance.
Ultra-low reverse recovery charge
Simple gate drive (0 V to +10 V or 12 V)
Robust gate oxide (±20 V capability)
High gate threshold voltage (+4 V) for very good gate bounce immunity
Very low source-drain voltage in reverse conduction mode
Transient over-voltage capability
Simple gate drive (0 V to +10 V or 12 V)
Robust gate oxide (±20 V capability)
High gate threshold voltage (+4 V) for very good gate bounce immunity
Very low source-drain voltage in reverse conduction mode
Transient over-voltage capability
Hard and soft switching converters for industrial and datacom power
Bridgeless totempole PFC
PV and UPS inverters
Servo motor drives
Bridgeless totempole PFC
PV and UPS inverters
Servo motor drives
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