Nexperia MOSFET, 47.2 A, 650 V TO-247 GAN041-650WSBQ

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Subtotal (1 tube of 30 units)*

£438.33

(exc. VAT)

£525.99

(inc. VAT)

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  • 30 unit(s) ready to ship
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30 +£14.611£438.33

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RS Stock No.:
243-4619
Mfr. Part No.:
GAN041-650WSBQ
Brand:
Nexperia
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Brand

Nexperia

Maximum Continuous Drain Current

47.2 A

Maximum Drain Source Voltage

650 V

Package Type

TO-247

Mounting Type

Through Hole

The Nexperia Gallium Nitride (GaN) FET in a TO-247 package is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies offering superior reliability and performance.

Ultra-low reverse recovery charge
Simple gate drive (0 V to +10 V or 12 V)
Robust gate oxide (±20 V capability)
High gate threshold voltage (+4 V) for very good gate bounce immunity
Very low source-drain voltage in reverse conduction mode
Transient over-voltage capability

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