Nexperia N-Channel MOSFET, 200 A, 55 V, 4-Pin LFPAK56E PSMN2R0-55YLHX
- RS Stock No.:
- 240-1975
- Mfr. Part No.:
- PSMN2R0-55YLHX
- Brand:
- Nexperia
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Subtotal (1 pack of 2 units)*
£7.29
(exc. VAT)
£8.748
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 1,758 unit(s) ready to ship
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Units | Per unit | Per Pack* |
---|---|---|
2 - 48 | £3.645 | £7.29 |
50 - 98 | £3.28 | £6.56 |
100 - 248 | £2.685 | £5.37 |
250 - 498 | £2.635 | £5.27 |
500 + | £2.295 | £4.59 |
*price indicative
- RS Stock No.:
- 240-1975
- Mfr. Part No.:
- PSMN2R0-55YLHX
- Brand:
- Nexperia
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Nexperia | |
Channel Type | N | |
Maximum Continuous Drain Current | 200 A | |
Maximum Drain Source Voltage | 55 V | |
Package Type | LFPAK56E | |
Mounting Type | Surface Mount | |
Pin Count | 4 | |
Number of Elements per Chip | 1 | |
Select all | ||
---|---|---|
Brand Nexperia | ||
Channel Type N | ||
Maximum Continuous Drain Current 200 A | ||
Maximum Drain Source Voltage 55 V | ||
Package Type LFPAK56E | ||
Mounting Type Surface Mount | ||
Pin Count 4 | ||
Number of Elements per Chip 1 | ||
The Nexperia N-channel enhancement mode MOSFET is in LFPAK56E package. The ASFET is particularly suited to 36 V battery powered applications requiring strong avalanche capability, linear mode performance, use at high switching frequencies, and also safe a
Qualified to 175 °C
Avalanche rated, 100% tested
Low QG, QGD and QOSS for high efficiency, especially at higher switching frequencies
Superfast switching with soft body-diode recovery for low-spiking and ringing, recommended for low EMI designs
Unique SchottkyPlus technology for Schottky-like switching performance and low IDSS leakage
Narrow VGS(th) rating for easy paralleling and improved current sharing
Very strong linear-mode / safe operating area characteristics for safe and reliable switching at high-current conditions
Avalanche rated, 100% tested
Low QG, QGD and QOSS for high efficiency, especially at higher switching frequencies
Superfast switching with soft body-diode recovery for low-spiking and ringing, recommended for low EMI designs
Unique SchottkyPlus technology for Schottky-like switching performance and low IDSS leakage
Narrow VGS(th) rating for easy paralleling and improved current sharing
Very strong linear-mode / safe operating area characteristics for safe and reliable switching at high-current conditions
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