Nexperia Type N-Channel MOSFET, 10.3 A, 30 V, 4-Pin LFPAK56E PSMN2R0-55YLHX

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Subtotal (1 pack of 2 units)*

£7.29

(exc. VAT)

£8.748

(inc. VAT)

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Per Pack*
2 - 48£3.645£7.29
50 - 98£3.28£6.56
100 - 248£2.685£5.37
250 - 498£2.635£5.27
500 +£2.295£4.59

*price indicative

Packaging Options:
RS Stock No.:
240-1975
Mfr. Part No.:
PSMN2R0-55YLHX
Brand:
Nexperia
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Brand

Nexperia

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

10.3A

Maximum Drain Source Voltage Vds

30V

Package Type

LFPAK56E

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

13.6mΩ

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

12.5W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Nexperia N-channel enhancement mode MOSFET is in LFPAK56E package. The ASFET is particularly suited to 36 V battery powered applications requiring strong avalanche capability, linear mode performance, use at high switching frequencies, and also safe a

Qualified to 175 °C

Avalanche rated, 100% tested

Low QG, QGD and QOSS for high efficiency, especially at higher switching frequencies

Superfast switching with soft body-diode recovery for low-spiking and ringing, recommended for low EMI designs

Unique “SchottkyPlus” technology for Schottky-like switching performance and low IDSS leakage

Narrow VGS(th) rating for easy paralleling and improved current sharing

Very strong linear-mode / safe operating area characteristics for safe and reliable switching at high-current conditions

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