Infineon BSZ Type N-Channel MOSFET, 212 A, 40 V N, 8-Pin PQFN BSZ021N04LS6ATMA1
- RS Stock No.:
- 241-9701
- Mfr. Part No.:
- BSZ021N04LS6ATMA1
- Brand:
- Infineon
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£1.96
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£2.36
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Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 18 | £0.98 | £1.96 |
| 20 - 48 | £0.79 | £1.58 |
| 50 - 98 | £0.745 | £1.49 |
| 100 - 198 | £0.695 | £1.39 |
| 200 + | £0.635 | £1.27 |
*price indicative
- RS Stock No.:
- 241-9701
- Mfr. Part No.:
- BSZ021N04LS6ATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 212A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | PQFN | |
| Series | BSZ | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.7mΩ | |
| Channel Mode | N | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1V | |
| Maximum Power Dissipation Pd | 81W | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 212A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type PQFN | ||
Series BSZ | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.7mΩ | ||
Channel Mode N | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1V | ||
Maximum Power Dissipation Pd 81W | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon OptiMOS 6 Power Transistor is a N channel MOSFET which has very low on-resistance. It is qualified according to JEDEC for target applications.
Halogen-free according to IEC61249-2-21
100% avalanche tested
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