Infineon N-Channel MOSFET, 153 A, 25 V, 8-Pin PQFN 3 x 3 BSZ018NE2LSIATMA1

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Subtotal (1 pack of 2 units)*

£2.40

(exc. VAT)

£2.88

(inc. VAT)

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Per unit
Per Pack*
2 - 8£1.20£2.40
10 - 18£1.135£2.27
20 - 48£1.035£2.07
50 - 98£0.915£1.83
100 +£0.875£1.75

*price indicative

Packaging Options:
RS Stock No.:
241-9699
Mfr. Part No.:
BSZ018NE2LSIATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

153 A

Maximum Drain Source Voltage

25 V

Package Type

PQFN 3 x 3

Mounting Type

Surface Mount

Pin Count

8

Number of Elements per Chip

1

The Infineon OptiMOS Power MOSFET is a N channel MOSFET which is Optimized for high performance Buck converter. It is 100% avalanche tested.

Monolithic integrated Schottky like diode
Halogen-free according to IEC61249-2-21

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Infineon CoolSic Schottky Diode
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Infineon Schottky Diodes & MOSFETs – Matched for Power, Built for Efficiency
Pair Infineon Schottky diodes with Infineon MOSFETs for a high-efficiency power solution that’s optimised from the ground up. Designed to work together, they deliver fast switching, low losses, and excellent thermal performance—ideal for SMPS, motor drives, and automotive systems. Reduce design complexity and boost reliability with components engineered for synergy.
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