Infineon BSZ Type N-Channel MOSFET, 212 A, 40 V N, 8-Pin SuperSO8 5 x 6

RS Stock No.:: 241-9680
Mfr. Part No.:: BSZ040N06LS5ATMA1
Brand:: Infineon

Infineon BSZ Type N-Channel MOSFET, 212 A, 40 V N, 8-Pin SuperSO8 5 x 6

Subtotal (1 reel of 5000 units)*

£2,170.00

(exc. VAT)

£2,605.00

(inc. VAT)

FREE delivery for orders over £50.00

In Stock

Plus 5,000 unit(s) shipping from 09 February 2026

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Reel*
5000 +	£0.434	£2,170.00

*price indicative

RS Stock No.:: 241-9680
Mfr. Part No.:: BSZ040N06LS5ATMA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	212A
	Maximum Drain Source Voltage Vds	40V
	Series	BSZ
	Package Type	SuperSO8 5 x 6
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.7mΩ
	Channel Mode	N
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	1V
	Typical Gate Charge Qg @ Vgs	80nC
	Maximum Power Dissipation Pd	81W
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 212A
	Maximum Drain Source Voltage Vds 40V
	Series BSZ
	Package Type SuperSO8 5 x 6
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.7mΩ
	Channel Mode N
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf 1V
	Typical Gate Charge Qg @ Vgs 80nC
	Maximum Power Dissipation Pd 81W
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - BSZ040N06LS5ATMA1

The Infineon OptiMOS™ 5 N-channel power MOSFET has 60 V drain source voltage (VDS) & 101 A drain current (ID). It's logic level are highly suitable for wireless charging, adapter and telecom applications. The devices' low gate charge (Q g) reduces switching losses without compromising conduction losses. The improved figues of merit allow operations at high switching frequencies. Furthermore, the logic level drive provides a low gate threshold voltage (V GS(th)) allowing the MOSFETs to be driven at 5V and directly from microcontrollers.

Optimized for high performance SMPS ,e.g. sync. rec.

100% avalanche tested

Superior thermal resistance

N-channel

Qualified according to JEDEC1) for target applications

Pb-free lead plating

RoHScompliant

Halogen-free according to IEC61249-2-21