Infineon N-Channel MOSFET Transistor, 101 A, 60 V, 8-Pin SuperSO8 5 x 6 BSZ040N06LS5ATMA1

Subtotal (1 reel of 5000 units)*

£2,170.00

(exc. VAT)

£2,605.00

(inc. VAT)

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5000 +£0.434£2,170.00

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RS Stock No.:
241-9680
Mfr. Part No.:
BSZ040N06LS5ATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

101 A

Maximum Drain Source Voltage

60 V

Package Type

SuperSO8 5 x 6

Mounting Type

Surface Mount

Pin Count

8

Number of Elements per Chip

1

The Infineon OptiMOS™ 5 N-channel power MOSFET has 60 V drain source voltage (VDS) & 101 A drain current (ID). It's logic level are highly suitable for wireless charging, adapter and telecom applications. The devices' low gate charge (Q g) reduces switching losses without compromising conduction losses. The improved figues of merit allow operations at high switching frequencies. Furthermore, the logic level drive provides a low gate threshold voltage (V GS(th)) allowing the MOSFETs to be driven at 5V and directly from microcontrollers.

Optimized for high performance SMPS ,e.g. sync. rec.
100% avalanche tested
Superior thermal resistance
N-channel
Qualified according to JEDEC1) for target applications
Pb-free lead plating
RoHScompliant
Halogen-free according to IEC61249-2-21

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