Infineon BSZ Type N-Channel MOSFET, 212 A, 40 V N, 8-Pin SuperSO8 5 x 6 BSZ017NE2LS5IATMA1
- RS Stock No.:
- 241-9679
- Mfr. Part No.:
- BSZ017NE2LS5IATMA1
- Brand:
- Infineon
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 5 units)*
£5.20
(exc. VAT)
£6.25
(inc. VAT)
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In Stock
- Plus 5,000 unit(s) shipping from 01 June 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | £1.04 | £5.20 |
| 50 - 120 | £0.916 | £4.58 |
| 125 - 245 | £0.862 | £4.31 |
| 250 - 495 | £0.80 | £4.00 |
| 500 + | £0.736 | £3.68 |
*price indicative
- RS Stock No.:
- 241-9679
- Mfr. Part No.:
- BSZ017NE2LS5IATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 212A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | SuperSO8 5 x 6 | |
| Series | BSZ | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.7mΩ | |
| Channel Mode | N | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Power Dissipation Pd | 81W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 212A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type SuperSO8 5 x 6 | ||
Series BSZ | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.7mΩ | ||
Channel Mode N | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Power Dissipation Pd 81W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon OptiMOS™ 5 N-channel power MOSFET has 25 V drain source voltage (VDS) & 134 A drain current (ID). It offers benchmark solutions by enabling highest power density and energy efficiency, both in standby and full operation. It has best-in-class on-state resistance and have broader use in desktop and server, high power density voltage regulator, etc.
Optimized for high performance buck converters
Monolithic integrated schottky like diode
Very low on-resistance RDS(on)@VGS = 4.5V
100% avalanche tested
N-channel
Qualified according to JEDEC1) for target applications
Pb-free lead plating
RoHS compliant
Halogen-free according to IEC61249-2-21
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