Microchip SiC N-Channel MOSFET, 26 A, 1200 V TO-247 MSC080SMA120B
- RS Stock No.:
- 241-9271
- Mfr. Part No.:
- MSC080SMA120B
- Brand:
- Microchip
Save 8% when you buy 100 units
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£8.69
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£10.43
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- Shipping from 07 November 2025
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Units | Per unit |
---|---|
1 - 4 | £8.69 |
5 - 9 | £8.52 |
10 - 99 | £8.34 |
100 + | £7.98 |
*price indicative
- RS Stock No.:
- 241-9271
- Mfr. Part No.:
- MSC080SMA120B
- Brand:
- Microchip
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Microchip | |
Channel Type | N | |
Maximum Continuous Drain Current | 26 A | |
Maximum Drain Source Voltage | 1200 V | |
Package Type | TO-247 | |
Mounting Type | Through Hole | |
Transistor Material | SiC | |
Select all | ||
---|---|---|
Brand Microchip | ||
Channel Type N | ||
Maximum Continuous Drain Current 26 A | ||
Maximum Drain Source Voltage 1200 V | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Transistor Material SiC | ||
The Microchip silicon carbide power MOSFET product line from Micro semi increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high voltage applications.
Low capacitances and low gate charge
Fast switching speed due to low internal gate resistance
Stable operation at high junction temperature TJ(max) equal to 175 °C
Fast and reliable body diode
Superior avalanche ruggedness
RoHS compliant
Fast switching speed due to low internal gate resistance
Stable operation at high junction temperature TJ(max) equal to 175 °C
Fast and reliable body diode
Superior avalanche ruggedness
RoHS compliant
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