Nexperia 2 Type N-Channel MOSFET, 42 A, 40 V, 8-Pin LFPAK56D BUK9V13-40HX
- RS Stock No.:
- 240-1822
- Mfr. Part No.:
- BUK9V13-40HX
- Brand:
- Nexperia
Bulk discount available
Subtotal (1 pack of 5 units)*
£5.06
(exc. VAT)
£6.07
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 06 July 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | £1.012 | £5.06 |
| 50 - 95 | £0.914 | £4.57 |
| 100 - 245 | £0.71 | £3.55 |
| 250 - 495 | £0.698 | £3.49 |
| 500 + | £0.586 | £2.93 |
*price indicative
- RS Stock No.:
- 240-1822
- Mfr. Part No.:
- BUK9V13-40HX
- Brand:
- Nexperia
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 42A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | LFPAK56D | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 13.6mΩ | |
| Typical Gate Charge Qg @ Vgs | 13.9nC | |
| Maximum Gate Source Voltage Vgs | -20 V | |
| Maximum Power Dissipation Pd | 46W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 42A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type LFPAK56D | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 13.6mΩ | ||
Typical Gate Charge Qg @ Vgs 13.9nC | ||
Maximum Gate Source Voltage Vgs -20 V | ||
Maximum Power Dissipation Pd 46W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
The Nexperia dual, logic level N-channel MOSFET in an LFPAK56D package (half-bridge configuration), using Trench 9 Trench MOS technology. This product has been designed and qualified to AEC-Q101.
LFPAK56D package with half-bridge configuration enables
Reduced PCB layout complexity
PCB shrinkage through reduced component footprint for 3-phase motor drive
Improved system level Rth(j-amb) due to optimized package design
Lower parasitic inductance to support higher efficiency
Footprint compatibility with LFPAK56D Dual package
Advanced AEC-Q101 grade Trench 9 silicon technology
Low power losses, high power density
Superior avalanche performance
Repetitive avalanche rated
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