Microchip TN5325 Silicon N-Channel MOSFET, 150 mA, 250 V, 3-Pin TO-92 TN5325K1-G
- RS Stock No.:
- 239-5618
- Mfr. Part No.:
- TN5325K1-G
- Brand:
- Microchip
Bulk discount available
Subtotal (1 pack of 25 units)*
£11.45
(exc. VAT)
£13.75
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 3,000 unit(s) shipping from 20 October 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
---|---|---|
25 - 25 | £0.458 | £11.45 |
50 - 75 | £0.449 | £11.23 |
100 - 225 | £0.42 | £10.50 |
250 - 975 | £0.412 | £10.30 |
1000 + | £0.404 | £10.10 |
*price indicative
- RS Stock No.:
- 239-5618
- Mfr. Part No.:
- TN5325K1-G
- Brand:
- Microchip
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Microchip | |
Channel Type | N | |
Maximum Continuous Drain Current | 150 mA | |
Maximum Drain Source Voltage | 250 V | |
Package Type | TO-92 | |
Series | TN5325 | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 2V | |
Transistor Material | Silicon | |
Number of Elements per Chip | 1 | |
Select all | ||
---|---|---|
Brand Microchip | ||
Channel Type N | ||
Maximum Continuous Drain Current 150 mA | ||
Maximum Drain Source Voltage 250 V | ||
Package Type TO-92 | ||
Series TN5325 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2V | ||
Transistor Material Silicon | ||
Number of Elements per Chip 1 | ||
The Microchip TN5325 series of low-threshold, enhancement-mode (normally-off) transistor utilize a vertical DMOS structure and a well-proven silicon gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown.
Low threshold of maximum 2V
High input impedance and high gain
Rise Time of 15 ns
Turn-off Delay Time of 25 ns
Fall Time of 25 ns
High input impedance and high gain
Rise Time of 15 ns
Turn-off Delay Time of 25 ns
Fall Time of 25 ns
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