Microchip TN5325 Type N-Channel MOSFET, 10.3 A, 650 V Enhancement, 3-Pin TO-92 TN5325K1-G
- RS Stock No.:
- 239-5618
- Mfr. Part No.:
- TN5325K1-G
- Brand:
- Microchip
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 25 units)*
£10.25
(exc. VAT)
£12.25
(inc. VAT)
FREE delivery for orders over £60.00
In Stock
- Plus 1,050 unit(s) shipping from 01 June 2026
- Plus 3,000 unit(s) shipping from 06 July 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 25 | £0.41 | £10.25 |
| 50 - 75 | £0.402 | £10.05 |
| 100 - 225 | £0.376 | £9.40 |
| 250 - 975 | £0.369 | £9.23 |
| 1000 + | £0.362 | £9.05 |
*price indicative
- RS Stock No.:
- 239-5618
- Mfr. Part No.:
- TN5325K1-G
- Brand:
- Microchip
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Microchip | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 10.3A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-92 | |
| Series | TN5325 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 8Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 140W | |
| Forward Voltage Vf | 1.8V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Microchip | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 10.3A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-92 | ||
Series TN5325 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 8Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 140W | ||
Forward Voltage Vf 1.8V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Microchip TN5325 series of low-threshold, enhancement-mode (normally-off) transistor utilize a vertical DMOS structure and a well-proven silicon gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown.
Low threshold of maximum 2V
High input impedance and high gain
Rise Time of 15 ns
Turn-off Delay Time of 25 ns
Fall Time of 25 ns
Related links
- Microchip TN5325 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-92
- Infineon CoolMOS CE Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220FP IPAW60R600CEXKSA1
- Infineon CoolMOS CE Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220FP
- Nexperia Type N-Channel MOSFET 25 V Enhancement, 8-Pin MLPAK33 PXN7R7-25QLJ
- Nexperia Type N-Channel MOSFET 30 V Enhancement, 8-Pin MLPAK33 PXN010-30QLJ
- Nexperia Type N-Channel MOSFET 25 V Enhancement, 8-Pin MLPAK33 PXN6R2-25QLJ
- Nexperia Type N-Channel MOSFET 25 V Enhancement, 8-Pin MLPAK33
- Nexperia Type N-Channel MOSFET 30 V Enhancement, 8-Pin MLPAK33