Microchip VP0106 P-Channel MOSFET, 250 mA, 60 V, 3-Pin TO-92 VP0106N3-G

View all MOSFETs
Bulk discount available

Subtotal (1 pack of 10 units)*

£7.75

(exc. VAT)

£9.30

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 140 unit(s) ready to ship
  • Plus 40 unit(s) ready to ship from another location
  • Plus 680 unit(s) shipping from 31 October 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
10 - 40£0.775£7.75
50 - 90£0.649£6.49
100 - 240£0.587£5.87
250 - 490£0.577£5.77
500 +£0.565£5.65

*price indicative

Packaging Options:
RS Stock No.:
236-8962
Mfr. Part No.:
VP0106N3-G
Brand:
Microchip
Find similar products by selecting one or more attributes.
Select all

Brand

Microchip

Channel Type

P

Maximum Continuous Drain Current

250 mA

Maximum Drain Source Voltage

60 V

Package Type

TO-92

Series

VP0106

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

8 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Number of Elements per Chip

1

The Microchip enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. The vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low CISS and fast switching speeds
Excellent thermal stability
Integral source-drain diode
High input impedance and high gain

Related links