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Infineon CoolMOS Type N-Channel MOSFET, 19 A, 700 V, 3-Pin TO-247 IPW65R125CFD7XKSA1

RS Stock No.:: 236-3676
Mfr. Part No.:: IPW65R125CFD7XKSA1
Brand:: Infineon

Infineon CoolMOS Type N-Channel MOSFET, 19 A, 700 V, 3-Pin TO-247 IPW65R125CFD7XKSA1

Bulk discount available

Subtotal (1 pack of 2 units)*

£7.50

(exc. VAT)

£9.00

(inc. VAT)

FREE delivery for orders over £50.00

In Stock

Plus 226 unit(s) shipping from 29 December 2025

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
2 - 8	£3.75	£7.50
10 - 18	£3.34	£6.68
20 - 48	£3.115	£6.23
50 - 98	£2.89	£5.78
100 +	£2.66	£5.32

*price indicative

RS Stock No.:: 236-3676
Mfr. Part No.:: IPW65R125CFD7XKSA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	19A
	Maximum Drain Source Voltage Vds	700V
	Series	CoolMOS
	Package Type	TO-247
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	125mΩ
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1V
	Typical Gate Charge Qg @ Vgs	36nC
	Maximum Power Dissipation Pd	98W
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Height	21.5mm
	Width	5.3 mm
	Length	16.3mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 19A
	Maximum Drain Source Voltage Vds 700V
	Series CoolMOS
	Package Type TO-247
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 125mΩ
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1V
	Typical Gate Charge Qg @ Vgs 36nC
	Maximum Power Dissipation Pd 98W
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Height 21.5mm
	Width 5.3 mm
	Length 16.3mm
	Automotive Standard No

Datasheet - IPW65R125CFD7XKSA1

The Infineon CoolMOS super junction MOSFET with integrated fast body diode is the perfect choice for resonant high power topologies. It is ideally suited for industrial applications, such as server, telecom, solar, and EV-charging stations, in which it enables significant efficiency improvements compared to competition. It has drain current of 15 A.

Excellent hard-commutation ruggedness

Extra safety margin for designs with increased bus voltage

Enabling increased power density

Outstanding light-load efficiency in industrial SMPS applications

Improved full-load efficiency in industrial SMPS applications

Price competitiveness compared to alternative offerings in the market